Comparison of the physical properties of GaN thin films deposited on (0001) and (011̄2) sapphire substrates

Chien Jen Sun*, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

64 Scopus citations

Abstract

A direct comparison of the physical properties of GaN thin films is made as a function of the choice of substrate orientations. Gallium nitride single crystals were grown on (0001) and (011̄2) sapphire substrates by metalorganic chemical vapor deposition. Better crystallinity with fine ridgelike facets is obtained on the (011̄2) sapphire. Also lower carrier concentration and higher mobilities indicate both lower nitrogen vacancies and less oxygen incorporation on the (011̄2) sapphire. The results of this study show better physical properties of GaN thin films achieved on (011̄2) sapphire.

Original languageEnglish (US)
Pages (from-to)973-975
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number7
DOIs
StatePublished - 1993

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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