Comparison of trimethylgallium and triethylgallium for the growth of GaN

A. Saxler*, D. Walker, P. Kung, X. Zhang, M. Razeghi, J. Solomon, W. C. Mitchel, H. R. Vydyanath

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

35 Scopus citations

Abstract

GaN films grown by low-pressure metalorganic chemical vapor deposition using trimethylgallium and triethylgallium as gallium precursors are compared. The films were characterized by x-ray diffraction. Hall effect, photoluminescence, secondary ion mass spectroscopy, and etch pit density measurements. GaN layers grown using triethylgallium exhibited superior electrical and optical properties and a lower carbon impurity concentration.

Original languageEnglish (US)
Pages (from-to)3272-3274
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number22
DOIs
StatePublished - Dec 1 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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