Comparison of trimethylgallium and triethylgallium for the growth of GaN

A. Saxler; D. Walker; P. Kung; X. Zhang; M. Razeghi; J. Solomon; W. C. Mitchel; H. R. Vydyanath

doi:10.1063/1.120310

Comparison of trimethylgallium and triethylgallium for the growth of GaN

A. Saxler^*, D. Walker, P. Kung, X. Zhang, M. Razeghi, J. Solomon, W. C. Mitchel, H. R. Vydyanath

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Review article › peer-review

44 Scopus citations

Abstract

GaN films grown by low-pressure metalorganic chemical vapor deposition using trimethylgallium and triethylgallium as gallium precursors are compared. The films were characterized by x-ray diffraction. Hall effect, photoluminescence, secondary ion mass spectroscopy, and etch pit density measurements. GaN layers grown using triethylgallium exhibited superior electrical and optical properties and a lower carbon impurity concentration.

Original language	English (US)
Pages (from-to)	3272-3274
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	22
DOIs	https://doi.org/10.1063/1.120310
State	Published - Dec 1 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.120310

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abstract = "GaN films grown by low-pressure metalorganic chemical vapor deposition using trimethylgallium and triethylgallium as gallium precursors are compared. The films were characterized by x-ray diffraction. Hall effect, photoluminescence, secondary ion mass spectroscopy, and etch pit density measurements. GaN layers grown using triethylgallium exhibited superior electrical and optical properties and a lower carbon impurity concentration.",

author = "A. Saxler and D. Walker and P. Kung and X. Zhang and M. Razeghi and J. Solomon and Mitchel, {W. C.} and Vydyanath, {H. R.}",

year = "1997",

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language = "English (US)",

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T1 - Comparison of trimethylgallium and triethylgallium for the growth of GaN

AU - Saxler, A.

AU - Walker, D.

AU - Kung, P.

AU - Zhang, X.

AU - Razeghi, M.

AU - Solomon, J.

AU - Mitchel, W. C.

AU - Vydyanath, H. R.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - GaN films grown by low-pressure metalorganic chemical vapor deposition using trimethylgallium and triethylgallium as gallium precursors are compared. The films were characterized by x-ray diffraction. Hall effect, photoluminescence, secondary ion mass spectroscopy, and etch pit density measurements. GaN layers grown using triethylgallium exhibited superior electrical and optical properties and a lower carbon impurity concentration.

AB - GaN films grown by low-pressure metalorganic chemical vapor deposition using trimethylgallium and triethylgallium as gallium precursors are compared. The films were characterized by x-ray diffraction. Hall effect, photoluminescence, secondary ion mass spectroscopy, and etch pit density measurements. GaN layers grown using triethylgallium exhibited superior electrical and optical properties and a lower carbon impurity concentration.

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JO - Applied Physics Letters

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ER -

Comparison of trimethylgallium and triethylgallium for the growth of GaN

Abstract

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