Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates

Erdem Cicek; Zahra Vashaei; Can Bayram; Ryan P McClintock; Manijeh Razeghi; Melville P Ulmer

doi:10.1117/12.863905

Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates

Erdem Cicek, Zahra Vashaei, Can Bayram, Ryan P McClintock, Manijeh Razeghi^*, Melville P Ulmer

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

There is a need for semiconductor-based ultraviolet photodetectors to support avalanche gain in order to realize better performance andmore effective compete with existing technologies. Wide bandgap III-Nitride semiconductors are the promising material system for the development of avalanche photodiodes (APDs) that could be a viable alternative to current bulky UV detectors such as photomultiplier tubes. In this paper, we review the current state-of-the-art in IIINitride visible-blind APDs, and present our latest results on GaN APDs grown on both conventional sapphire and low dislocation density free-standing c- and m-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. The spectral response and Geiger-mode photon counting performance of UV APDs are studied under low photon fluxes, with single photon detection capabilities as much as 30% being demonstrated in smaller devices. Geiger-mode operation conditions are optimized for enhanced SPDE.

Original language	English (US)
Title of host publication	Detectors and Imaging Devices
Subtitle of host publication	Infrared, Focal Plane, Single Photon
Volume	7780
DOIs	https://doi.org/10.1117/12.863905
State	Published - Oct 25 2010
Event	Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon - San Diego, CA, United States Duration: Aug 4 2010 → Aug 5 2010

Other

Other	Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon
Country	United States
City	San Diego, CA
Period	8/4/10 → 8/5/10

Keywords

APD
Avalanche photodiode
GaN
Geiger Mode
Polar and nonpolar GaN substrates
Single photon detection

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates",

abstract = "There is a need for semiconductor-based ultraviolet photodetectors to support avalanche gain in order to realize better performance andmore effective compete with existing technologies. Wide bandgap III-Nitride semiconductors are the promising material system for the development of avalanche photodiodes (APDs) that could be a viable alternative to current bulky UV detectors such as photomultiplier tubes. In this paper, we review the current state-of-the-art in IIINitride visible-blind APDs, and present our latest results on GaN APDs grown on both conventional sapphire and low dislocation density free-standing c- and m-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. The spectral response and Geiger-mode photon counting performance of UV APDs are studied under low photon fluxes, with single photon detection capabilities as much as 30% being demonstrated in smaller devices. Geiger-mode operation conditions are optimized for enhanced SPDE.",

keywords = "APD, Avalanche photodiode, GaN, Geiger Mode, Polar and nonpolar GaN substrates, Single photon detection",

author = "Erdem Cicek and Zahra Vashaei and Can Bayram and McClintock, {Ryan P} and Manijeh Razeghi and Ulmer, {Melville P}",

year = "2010",

month = oct,

day = "25",

doi = "10.1117/12.863905",

language = "English (US)",

isbn = "9780819482761",

volume = "7780",

booktitle = "Detectors and Imaging Devices",

note = "Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon ; Conference date: 04-08-2010 Through 05-08-2010",

}

Cicek, E, Vashaei, Z, Bayram, C, McClintock, RP, Razeghi, M & Ulmer, MP 2010, Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates. in Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon. vol. 7780, 77801P, Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon, San Diego, CA, United States, 8/4/10. https://doi.org/10.1117/12.863905

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AU - Cicek, Erdem

AU - Vashaei, Zahra

AU - Bayram, Can

AU - McClintock, Ryan P

AU - Razeghi, Manijeh

AU - Ulmer, Melville P

PY - 2010/10/25

Y1 - 2010/10/25

N2 - There is a need for semiconductor-based ultraviolet photodetectors to support avalanche gain in order to realize better performance andmore effective compete with existing technologies. Wide bandgap III-Nitride semiconductors are the promising material system for the development of avalanche photodiodes (APDs) that could be a viable alternative to current bulky UV detectors such as photomultiplier tubes. In this paper, we review the current state-of-the-art in IIINitride visible-blind APDs, and present our latest results on GaN APDs grown on both conventional sapphire and low dislocation density free-standing c- and m-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. The spectral response and Geiger-mode photon counting performance of UV APDs are studied under low photon fluxes, with single photon detection capabilities as much as 30% being demonstrated in smaller devices. Geiger-mode operation conditions are optimized for enhanced SPDE.

AB - There is a need for semiconductor-based ultraviolet photodetectors to support avalanche gain in order to realize better performance andmore effective compete with existing technologies. Wide bandgap III-Nitride semiconductors are the promising material system for the development of avalanche photodiodes (APDs) that could be a viable alternative to current bulky UV detectors such as photomultiplier tubes. In this paper, we review the current state-of-the-art in IIINitride visible-blind APDs, and present our latest results on GaN APDs grown on both conventional sapphire and low dislocation density free-standing c- and m-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. The spectral response and Geiger-mode photon counting performance of UV APDs are studied under low photon fluxes, with single photon detection capabilities as much as 30% being demonstrated in smaller devices. Geiger-mode operation conditions are optimized for enhanced SPDE.

KW - APD

KW - Avalanche photodiode

KW - GaN

KW - Geiger Mode

KW - Polar and nonpolar GaN substrates

KW - Single photon detection

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Y2 - 4 August 2010 through 5 August 2010

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