Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire

A. Yasan*, R. McClintock, K. Mayes, S. R. Darvish, H. Zhang, P. Kung, M. Razeghi, S. K. Lee, J. Y. Han

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

68 Scopus citations

Abstract

Based on AlInGaN/AlInGaN multiquantum wells, we compare properties of ultraviolet light-emitting diodes (LED) with peak emission at 340 nm grown on free-standing hydride vapor phase epitaxially grown GaN substrate and on sapphire. For the LED grown on GaN substrate, a differential resistance as low as 13 and an output power of more than one order of magnitude higher than that of the same structure grown on sapphire are achieved. Due to higher thermal conductivity of GaN, output power of the LEDs saturates at higher injection currents compared to the devices grown on sapphire.

Original languageEnglish (US)
Pages (from-to)2151-2153
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number12
DOIs
StatePublished - Sep 16 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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