Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects

Dae Hyeong Kim; Won Mook Choi; Jong Hyun Ahn; Hoon Sik Kim; Jizhou Song; Yonggang Huang; Zhuangjian Liu; Chun Lu; Chan Ghee Koh; John A. Rogers

doi:10.1063/1.2963364

Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects

Dae Hyeong Kim, Won Mook Choi, Jong Hyun Ahn, Hoon Sik Kim, Jizhou Song, Yonggang Huang, Zhuangjian Liu, Chun Lu, Chan Ghee Koh, John A. Rogers

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

Stretchable complementary metal oxide silicon circuits consisting of ultrathin active devices mechanically and electrically connected by narrow metal lines and polymer bridging structures are presented. This layout-together with designs that locate the neutral mechanical plane near the critical circuit layers-yields strain independent electrical performance and realistic paths to circuit integration. A typical implementation reduces the strain in the silicon to less than ∼0.04% for applied strains of ∼10%. Mechanical and electrical modeling and experimental characterization reveal the underlying physics of these systems.

Original language	English (US)
Article number	044102
Journal	Applied Physics Letters
Volume	93
Issue number	4
DOIs	https://doi.org/10.1063/1.2963364
State	Published - 2008

Funding

This is supported by National Science Foundation under Grant No. DMI-0328162 and U.S. Department of Energy, Division of Materials Sciences under Award No. DE-FG02 7ER46471, through the Materials Research Laboratory and Center for Microanalysis of Materials (DE-FG02-07ER46453) at the University of Illinois at Urbana-Champaign.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2963364

Cite this

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title = "Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects",

abstract = "Stretchable complementary metal oxide silicon circuits consisting of ultrathin active devices mechanically and electrically connected by narrow metal lines and polymer bridging structures are presented. This layout-together with designs that locate the neutral mechanical plane near the critical circuit layers-yields strain independent electrical performance and realistic paths to circuit integration. A typical implementation reduces the strain in the silicon to less than ∼0.04% for applied strains of ∼10%. Mechanical and electrical modeling and experimental characterization reveal the underlying physics of these systems.",

author = "Kim, {Dae Hyeong} and Choi, {Won Mook} and Ahn, {Jong Hyun} and Kim, {Hoon Sik} and Jizhou Song and Yonggang Huang and Zhuangjian Liu and Chun Lu and Koh, {Chan Ghee} and Rogers, {John A.}",

note = "Funding Information: This is supported by National Science Foundation under Grant No. DMI-0328162 and U.S. Department of Energy, Division of Materials Sciences under Award No. DE-FG02 7ER46471, through the Materials Research Laboratory and Center for Microanalysis of Materials (DE-FG02-07ER46453) at the University of Illinois at Urbana-Champaign. ",

year = "2008",

doi = "10.1063/1.2963364",

language = "English (US)",

volume = "93",

journal = "Applied Physics Letters",

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AU - Kim, Dae Hyeong

AU - Choi, Won Mook

AU - Ahn, Jong Hyun

AU - Kim, Hoon Sik

AU - Song, Jizhou

AU - Huang, Yonggang

AU - Liu, Zhuangjian

AU - Lu, Chun

AU - Koh, Chan Ghee

AU - Rogers, John A.

N1 - Funding Information: This is supported by National Science Foundation under Grant No. DMI-0328162 and U.S. Department of Energy, Division of Materials Sciences under Award No. DE-FG02 7ER46471, through the Materials Research Laboratory and Center for Microanalysis of Materials (DE-FG02-07ER46453) at the University of Illinois at Urbana-Champaign.

PY - 2008

Y1 - 2008

N2 - Stretchable complementary metal oxide silicon circuits consisting of ultrathin active devices mechanically and electrically connected by narrow metal lines and polymer bridging structures are presented. This layout-together with designs that locate the neutral mechanical plane near the critical circuit layers-yields strain independent electrical performance and realistic paths to circuit integration. A typical implementation reduces the strain in the silicon to less than ∼0.04% for applied strains of ∼10%. Mechanical and electrical modeling and experimental characterization reveal the underlying physics of these systems.

AB - Stretchable complementary metal oxide silicon circuits consisting of ultrathin active devices mechanically and electrically connected by narrow metal lines and polymer bridging structures are presented. This layout-together with designs that locate the neutral mechanical plane near the critical circuit layers-yields strain independent electrical performance and realistic paths to circuit integration. A typical implementation reduces the strain in the silicon to less than ∼0.04% for applied strains of ∼10%. Mechanical and electrical modeling and experimental characterization reveal the underlying physics of these systems.

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Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects

Abstract

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