Composition analysis of single semiconductor nanowires using pulsed-laser atom probe tomography

D. E. Perea; J. L. Lensch; S. J. May; B. W. Wessels; L. J. Lauhon

doi:10.1007/s00339-006-3710-1

Composition analysis of single semiconductor nanowires using pulsed-laser atom probe tomography

D. E. Perea, J. L. Lensch, S. J. May, B. W. Wessels, L. J. Lauhon^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

We report the composition analysis of single InAs and Si semiconductor nanowires using pulsed-laser atom probe tomography. The experimental conditions and sample geometries needed to realize 3-D composition mapping are described in detail. InAs mass spectra obtained using voltage pulses and laser pulses are compared, and are found to be superior for pulsed-laser evaporation. The ability to analyze intrinsic Si nanowires using pulsed laser evaporation is demonstrated. No peaks associated with the gold catalyst used were found in the InAs or the Si nanowire mass spectra.

Original language	English (US)
Pages (from-to)	271-275
Number of pages	5
Journal	Applied Physics A: Materials Science and Processing
Volume	85
Issue number	3
DOIs	https://doi.org/10.1007/s00339-006-3710-1
State	Published - Nov 2006

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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title = "Composition analysis of single semiconductor nanowires using pulsed-laser atom probe tomography",

abstract = "We report the composition analysis of single InAs and Si semiconductor nanowires using pulsed-laser atom probe tomography. The experimental conditions and sample geometries needed to realize 3-D composition mapping are described in detail. InAs mass spectra obtained using voltage pulses and laser pulses are compared, and are found to be superior for pulsed-laser evaporation. The ability to analyze intrinsic Si nanowires using pulsed laser evaporation is demonstrated. No peaks associated with the gold catalyst used were found in the InAs or the Si nanowire mass spectra.",

author = "Perea, {D. E.} and Lensch, {J. L.} and May, {S. J.} and Wessels, {B. W.} and Lauhon, {L. J.}",

year = "2006",

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AU - Perea, D. E.

AU - Lensch, J. L.

AU - May, S. J.

AU - Wessels, B. W.

AU - Lauhon, L. J.

PY - 2006/11

Y1 - 2006/11

N2 - We report the composition analysis of single InAs and Si semiconductor nanowires using pulsed-laser atom probe tomography. The experimental conditions and sample geometries needed to realize 3-D composition mapping are described in detail. InAs mass spectra obtained using voltage pulses and laser pulses are compared, and are found to be superior for pulsed-laser evaporation. The ability to analyze intrinsic Si nanowires using pulsed laser evaporation is demonstrated. No peaks associated with the gold catalyst used were found in the InAs or the Si nanowire mass spectra.

AB - We report the composition analysis of single InAs and Si semiconductor nanowires using pulsed-laser atom probe tomography. The experimental conditions and sample geometries needed to realize 3-D composition mapping are described in detail. InAs mass spectra obtained using voltage pulses and laser pulses are compared, and are found to be superior for pulsed-laser evaporation. The ability to analyze intrinsic Si nanowires using pulsed laser evaporation is demonstrated. No peaks associated with the gold catalyst used were found in the InAs or the Si nanowire mass spectra.

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JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 3

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Composition analysis of single semiconductor nanowires using pulsed-laser atom probe tomography

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