Compositional and structural modifications in ternary bismuth chalcogenides and their thermoelectric properties

D. Y. Chung; M. A. Lane; J. R. Ireland; P. W. Brazis; C. R. Kannewurf; M. G. Kanatzidis

Compositional and structural modifications in ternary bismuth chalcogenides and their thermoelectric properties

D. Y. Chung^*, M. A. Lane, J. R. Ireland, P. W. Brazis, C. R. Kannewurf, M. G. Kanatzidis

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Based on the versatile combination of PbQ- and Bi₂Q₃-type (Q = S, Se, Te) fragments, we explored new compounds in the Pb/Bi/Se ternary system. The new class of compounds, Pb₅Bi₆Se₁₄, Pb₅Pb₁₂Se₂₃, and PbBi₈Se₁₃ are homologues with different combination of alternating Bi₂Se₃- and PbSe-type layers. α- and β-Pb₆Bi₂Se₉ were obtained in different synthetic conditions and the former is isostructural to heyrovskyite (Pb₆Bi₂S₉) while the latter is a NaCl-type cubic phase. Pb⁵Bi₆Se₁₄ shows a power factor of 11.2 μW/cm·K² with electrical conductivity of 657 S/cm and thermopower of -131 μV/K at 271 K. The most significant characteristic of this material is the extremely low thermal conductivity of less than 1.0 W/m·K at room temperature. On the basis of these properties, a preliminary doping study for Pb⁵Bi₆Se₁₄ with Sn, Sb, and SbBr₃ as dopants was undertaken and the results are presented in this report.

Original language	English (US)
Pages (from-to)	Z741-Z746
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	4
State	Published - Jan 1 2001
Event	IEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia Duration: May 6 2001 → May 9 2001

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

@article{13891dd551934cb8be08ed62a3b34b09,

title = "Compositional and structural modifications in ternary bismuth chalcogenides and their thermoelectric properties",

abstract = "Based on the versatile combination of PbQ- and Bi2Q3-type (Q = S, Se, Te) fragments, we explored new compounds in the Pb/Bi/Se ternary system. The new class of compounds, Pb5Bi6Se14, Pb5Pb12Se23, and PbBi8Se13 are homologues with different combination of alternating Bi2Se3- and PbSe-type layers. α- and β-Pb6Bi2Se9 were obtained in different synthetic conditions and the former is isostructural to heyrovskyite (Pb6Bi2S9) while the latter is a NaCl-type cubic phase. Pb5Bi6Se14 shows a power factor of 11.2 μW/cm·K2 with electrical conductivity of 657 S/cm and thermopower of -131 μV/K at 271 K. The most significant characteristic of this material is the extremely low thermal conductivity of less than 1.0 W/m·K at room temperature. On the basis of these properties, a preliminary doping study for Pb5Bi6Se14 with Sn, Sb, and SbBr3 as dopants was undertaken and the results are presented in this report.",

author = "Chung, {D. Y.} and Lane, {M. A.} and Ireland, {J. R.} and Brazis, {P. W.} and Kannewurf, {C. R.} and Kanatzidis, {M. G.}",

year = "2001",

month = jan,

day = "1",

language = "English (US)",

volume = "4",

pages = "Z741--Z746",

journal = "Proceedings - IEEE International Symposium on Circuits and Systems",

issn = "0271-4310",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Symposium on Circuits and Systems (ISCAS 2001) ; Conference date: 06-05-2001 Through 09-05-2001",

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T1 - Compositional and structural modifications in ternary bismuth chalcogenides and their thermoelectric properties

AU - Chung, D. Y.

AU - Lane, M. A.

AU - Ireland, J. R.

AU - Brazis, P. W.

AU - Kannewurf, C. R.

AU - Kanatzidis, M. G.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Based on the versatile combination of PbQ- and Bi2Q3-type (Q = S, Se, Te) fragments, we explored new compounds in the Pb/Bi/Se ternary system. The new class of compounds, Pb5Bi6Se14, Pb5Pb12Se23, and PbBi8Se13 are homologues with different combination of alternating Bi2Se3- and PbSe-type layers. α- and β-Pb6Bi2Se9 were obtained in different synthetic conditions and the former is isostructural to heyrovskyite (Pb6Bi2S9) while the latter is a NaCl-type cubic phase. Pb5Bi6Se14 shows a power factor of 11.2 μW/cm·K2 with electrical conductivity of 657 S/cm and thermopower of -131 μV/K at 271 K. The most significant characteristic of this material is the extremely low thermal conductivity of less than 1.0 W/m·K at room temperature. On the basis of these properties, a preliminary doping study for Pb5Bi6Se14 with Sn, Sb, and SbBr3 as dopants was undertaken and the results are presented in this report.

AB - Based on the versatile combination of PbQ- and Bi2Q3-type (Q = S, Se, Te) fragments, we explored new compounds in the Pb/Bi/Se ternary system. The new class of compounds, Pb5Bi6Se14, Pb5Pb12Se23, and PbBi8Se13 are homologues with different combination of alternating Bi2Se3- and PbSe-type layers. α- and β-Pb6Bi2Se9 were obtained in different synthetic conditions and the former is isostructural to heyrovskyite (Pb6Bi2S9) while the latter is a NaCl-type cubic phase. Pb5Bi6Se14 shows a power factor of 11.2 μW/cm·K2 with electrical conductivity of 657 S/cm and thermopower of -131 μV/K at 271 K. The most significant characteristic of this material is the extremely low thermal conductivity of less than 1.0 W/m·K at room temperature. On the basis of these properties, a preliminary doping study for Pb5Bi6Se14 with Sn, Sb, and SbBr3 as dopants was undertaken and the results are presented in this report.

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M3 - Conference article

AN - SCOPUS:0035018969

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JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

T2 - IEEE International Symposium on Circuits and Systems (ISCAS 2001)

Y2 - 6 May 2001 through 9 May 2001

ER -

Compositional and structural modifications in ternary bismuth chalcogenides and their thermoelectric properties

Abstract

ASJC Scopus subject areas

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