Compositional and structural modifications in ternary bismuth chalcogenides and their thermoelectric properties

D. Y. Chung*, M. A. Lane, J. R. Ireland, P. W. Brazis, C. R. Kannewurf, M. G. Kanatzidis

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Based on the versatile combination of PbQ- and Bi2Q3-type (Q = S, Se, Te) fragments, we explored new compounds in the Pb/Bi/Se ternary system. The new class of compounds, Pb5Bi6Se14, Pb5Pb12Se23, and PbBi8Se13 are homologues with different combination of alternating Bi2Se3- and PbSe-type layers. α- and β-Pb6Bi2Se9 were obtained in different synthetic conditions and the former is isostructural to heyrovskyite (Pb6Bi2S9) while the latter is a NaCl-type cubic phase. Pb5Bi6Se14 shows a power factor of 11.2 μW/cm·K2 with electrical conductivity of 657 S/cm and thermopower of -131 μV/K at 271 K. The most significant characteristic of this material is the extremely low thermal conductivity of less than 1.0 W/m·K at room temperature. On the basis of these properties, a preliminary doping study for Pb5Bi6Se14 with Sn, Sb, and SbBr3 as dopants was undertaken and the results are presented in this report.

Original languageEnglish (US)
Pages (from-to)Z741-Z746
JournalProceedings - IEEE International Symposium on Circuits and Systems
Volume4
StatePublished - Jan 1 2001
EventIEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia
Duration: May 6 2001May 9 2001

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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