Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition

B. Lane; D. Wu; A. Rybaltowski; H. Yi; J. Diaz; M. Razeghi

doi:10.1063/1.118176

Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition

B. Lane^*, D. Wu, A. Rybaltowski, H. Yi, J. Diaz, M. Razeghi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

A compressively strained InAsSb/InAs multiple quantum-well (MQW) structure was grown by low-pressure metal-organic chemical vapor deposition. Maximum output power (from two facets) up to 1 W with differential efficiency about 70% was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.65 μm at 90 K in pulse mode operation. About 2 times lower threshold current density was obtained from the MQW lasers for a temperature range of 90 to 140 K compared to the double heterostructure lasers grown on the same growth conditions.

Original language	English (US)
Pages (from-to)	443-445
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	4
DOIs	https://doi.org/10.1063/1.118176
State	Published - Jan 27 1997

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Physics and Astronomy (miscellaneous)

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abstract = "A compressively strained InAsSb/InAs multiple quantum-well (MQW) structure was grown by low-pressure metal-organic chemical vapor deposition. Maximum output power (from two facets) up to 1 W with differential efficiency about 70% was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.65 μm at 90 K in pulse mode operation. About 2 times lower threshold current density was obtained from the MQW lasers for a temperature range of 90 to 140 K compared to the double heterostructure lasers grown on the same growth conditions.",

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AU - Lane, B.

AU - Wu, D.

AU - Rybaltowski, A.

AU - Yi, H.

AU - Diaz, J.

AU - Razeghi, M.

PY - 1997/1/27

Y1 - 1997/1/27

N2 - A compressively strained InAsSb/InAs multiple quantum-well (MQW) structure was grown by low-pressure metal-organic chemical vapor deposition. Maximum output power (from two facets) up to 1 W with differential efficiency about 70% was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.65 μm at 90 K in pulse mode operation. About 2 times lower threshold current density was obtained from the MQW lasers for a temperature range of 90 to 140 K compared to the double heterostructure lasers grown on the same growth conditions.

AB - A compressively strained InAsSb/InAs multiple quantum-well (MQW) structure was grown by low-pressure metal-organic chemical vapor deposition. Maximum output power (from two facets) up to 1 W with differential efficiency about 70% was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.65 μm at 90 K in pulse mode operation. About 2 times lower threshold current density was obtained from the MQW lasers for a temperature range of 90 to 140 K compared to the double heterostructure lasers grown on the same growth conditions.

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Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition

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