Abstract
A compressively strained InAsSb/InAs multiple quantum-well (MQW) structure was grown by low-pressure metal-organic chemical vapor deposition. Maximum output power (from two facets) up to 1 W with differential efficiency about 70% was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.65 μm at 90 K in pulse mode operation. About 2 times lower threshold current density was obtained from the MQW lasers for a temperature range of 90 to 140 K compared to the double heterostructure lasers grown on the same growth conditions.
Original language | English (US) |
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Pages (from-to) | 443-445 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 70 |
Issue number | 4 |
DOIs | |
State | Published - Jan 27 1997 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)