Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition

B. Lane*, D. Wu, A. Rybaltowski, H. Yi, J. Diaz, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

A compressively strained InAsSb/InAs multiple quantum-well (MQW) structure was grown by low-pressure metal-organic chemical vapor deposition. Maximum output power (from two facets) up to 1 W with differential efficiency about 70% was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.65 μm at 90 K in pulse mode operation. About 2 times lower threshold current density was obtained from the MQW lasers for a temperature range of 90 to 140 K compared to the double heterostructure lasers grown on the same growth conditions.

Original languageEnglish (US)
Pages (from-to)443-445
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number4
DOIs
StatePublished - Jan 27 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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