Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition

INIS

• cavities 25%
• chemical vapor deposition 50%
• comparative evaluations 25%
• current density 25%
• efficiency 25%
• growth 25%
• indium arsenides 25%
• lasers 100%
• length 25%
• low pressure 25%
• operation 25%
• organometallic compounds 50%
• output 25%
• power 25%
• pulses 25%
• quantum wells 100%
• temperature range 25%
• threshold current 25%
• wavelengths 25%
• width 25%

Physics

• Flat Surfaces 25%
• Growth 25%
• Laser 50%
• Low Pressure 25%
• Metalorganic Chemical Vapor Deposition 50%
• Multiple Quantum Well 100%
• Output 25%
• Pulses 25%
• Quantum Well Lasers 50%
• Temperature 25%
• Width 25%

Material Science

• Density 25%
• Heterojunction 25%