Computational band-structure engineering of III-V semiconductor alloys

Clint B. Geller*, Walter Wolf, Silvia Picozzi, Alessandra Continenza, Ryoji Asahi, Wolfgang Mannstadt, Arthur J Freeman, Erich Wimmer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

93 Scopus citations

Abstract

The calculations for energy-band structures and excitation energies of binary semiconductors using an all-electron screened exchange method were presented. The screen exchange method was implemented in full-potential linearized augmented plane-wave (FLAPW) method. Screen exchange method showed better performance for calculating conduction-band effective masses. The sX-FLAPW method showed improved approach for the description of fundamental band gaps, effective masses and higher-lying states.

Original languageEnglish (US)
Pages (from-to)368-370
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number3
DOIs
StatePublished - Jul 16 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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