Abstract
The calculations for energy-band structures and excitation energies of binary semiconductors using an all-electron screened exchange method were presented. The screen exchange method was implemented in full-potential linearized augmented plane-wave (FLAPW) method. Screen exchange method showed better performance for calculating conduction-band effective masses. The sX-FLAPW method showed improved approach for the description of fundamental band gaps, effective masses and higher-lying states.
Original language | English (US) |
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Pages (from-to) | 368-370 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 79 |
Issue number | 3 |
DOIs | |
State | Published - Jul 16 2001 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)