Computational lithography: Exhausting the resolution limits of 193-nm projection lithography systems

David O S Melville; Alan E. Rosenbluth; Andreas Waechter; Marc Millstone; Jaione Tirapu-Azpiroz; Kehan Tian; Kafai Lai; Tadanobu Inoue; Masaharu Sakamoto; Kostas Adam; Alexander Tritchkov

doi:10.1116/1.3662090

Computational lithography: Exhausting the resolution limits of 193-nm projection lithography systems

David O S Melville, Alan E. Rosenbluth, Andreas Waechter, Marc Millstone, Jaione Tirapu-Azpiroz, Kehan Tian, Kafai Lai, Tadanobu Inoue, Masaharu Sakamoto, Kostas Adam, Alexander Tritchkov

Industrial Engineering and Management Sciences

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

In the recent past, scaling of semiconductor fabrication systems has been dominated by wavelength and numerical aperture modifications. This is now no longer the case for 193-nm immersion projection lithography (193i) systems as there are no technical paths for continued benefit from the in these areas. Instead, a range of techniques including patterning processes and system optimization are being used to push the limits of the system. This paper will review the elements that are now driving scaling for a system of fixed wavelength and numerical aperture.

Original language	English (US)
Article number	06FH04
Journal	Journal of Vacuum Science and Technology B
Volume	29
Issue number	6
DOIs	https://doi.org/10.1116/1.3662090
State	Published - Nov 2011

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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AU - Waechter, Andreas

AU - Millstone, Marc

AU - Tirapu-Azpiroz, Jaione

AU - Tian, Kehan

AU - Lai, Kafai

AU - Inoue, Tadanobu

AU - Sakamoto, Masaharu

AU - Adam, Kostas

AU - Tritchkov, Alexander

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Computational lithography: Exhausting the resolution limits of 193-nm projection lithography systems

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