Experimental results of Auger profiles obtained on a chemical bevel of an InP/GaAs structure are reported. A theoretical procedure is established to convert the intensity profile into concentration profiles. It is applied to evaluate the concentration distribution of each species-Ga, In, As, P-independently of each others with a precision of ±5%. It is verified that the composition of the interface is GaxIn1-xAs yP1-y (0≤x, y≤1). Owing to differences between the atomic diffusions of III- and V-type elements, the transition region can be subdivided into three regions having the following compositions: (i) GaAs yP1-y with 0.87≤y≤1; (ii) GaxIn 1-xAsyP1-y with 0≤y≤0.87 and 0.24≤x<1; (iii) PGaxIn1-x with x<0.24. The width of each region is also indicated.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)