Concentration gradient at an InP/GaAs interface determined by Auger analysis on a chemical bevel

J. Cazaux; P. Etienne; M. Razeghi

doi:10.1063/1.336789

Concentration gradient at an InP/GaAs interface determined by Auger analysis on a chemical bevel

J. Cazaux^*, P. Etienne, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Experimental results of Auger profiles obtained on a chemical bevel of an InP/GaAs structure are reported. A theoretical procedure is established to convert the intensity profile into concentration profiles. It is applied to evaluate the concentration distribution of each species-Ga, In, As, P-independently of each others with a precision of ±5%. It is verified that the composition of the interface is Ga_xIn_1-xAs _yP_1-y (0≤x, y≤1). Owing to differences between the atomic diffusions of III- and V-type elements, the transition region can be subdivided into three regions having the following compositions: (i) GaAs _yP_1-y with 0.87≤y≤1; (ii) Ga_xIn _1-xAs_yP_1-y with 0≤y≤0.87 and 0.24≤x<1; (iii) PGa_xIn_1-x with x<0.24. The width of each region is also indicated.

Original language	English (US)
Pages (from-to)	3598-3601
Number of pages	4
Journal	Journal of Applied Physics
Volume	59
Issue number	10
DOIs	https://doi.org/10.1063/1.336789
State	Published - Dec 1 1986

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.336789

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title = "Concentration gradient at an InP/GaAs interface determined by Auger analysis on a chemical bevel",

abstract = "Experimental results of Auger profiles obtained on a chemical bevel of an InP/GaAs structure are reported. A theoretical procedure is established to convert the intensity profile into concentration profiles. It is applied to evaluate the concentration distribution of each species-Ga, In, As, P-independently of each others with a precision of ±5%. It is verified that the composition of the interface is GaxIn1-xAs yP1-y (0≤x, y≤1). Owing to differences between the atomic diffusions of III- and V-type elements, the transition region can be subdivided into three regions having the following compositions: (i) GaAs yP1-y with 0.87≤y≤1; (ii) GaxIn 1-xAsyP1-y with 0≤y≤0.87 and 0.24≤x<1; (iii) PGaxIn1-x with x<0.24. The width of each region is also indicated.",

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T1 - Concentration gradient at an InP/GaAs interface determined by Auger analysis on a chemical bevel

AU - Cazaux, J.

AU - Etienne, P.

AU - Razeghi, M.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - Experimental results of Auger profiles obtained on a chemical bevel of an InP/GaAs structure are reported. A theoretical procedure is established to convert the intensity profile into concentration profiles. It is applied to evaluate the concentration distribution of each species-Ga, In, As, P-independently of each others with a precision of ±5%. It is verified that the composition of the interface is GaxIn1-xAs yP1-y (0≤x, y≤1). Owing to differences between the atomic diffusions of III- and V-type elements, the transition region can be subdivided into three regions having the following compositions: (i) GaAs yP1-y with 0.87≤y≤1; (ii) GaxIn 1-xAsyP1-y with 0≤y≤0.87 and 0.24≤x<1; (iii) PGaxIn1-x with x<0.24. The width of each region is also indicated.

AB - Experimental results of Auger profiles obtained on a chemical bevel of an InP/GaAs structure are reported. A theoretical procedure is established to convert the intensity profile into concentration profiles. It is applied to evaluate the concentration distribution of each species-Ga, In, As, P-independently of each others with a precision of ±5%. It is verified that the composition of the interface is GaxIn1-xAs yP1-y (0≤x, y≤1). Owing to differences between the atomic diffusions of III- and V-type elements, the transition region can be subdivided into three regions having the following compositions: (i) GaAs yP1-y with 0.87≤y≤1; (ii) GaxIn 1-xAsyP1-y with 0≤y≤0.87 and 0.24≤x<1; (iii) PGaxIn1-x with x<0.24. The width of each region is also indicated.

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Concentration gradient at an InP/GaAs interface determined by Auger analysis on a chemical bevel

Abstract

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