Concentration gradient at an InP/GaAs interface determined by Auger analysis on a chemical bevel

J. Cazaux*, P. Etienne, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Experimental results of Auger profiles obtained on a chemical bevel of an InP/GaAs structure are reported. A theoretical procedure is established to convert the intensity profile into concentration profiles. It is applied to evaluate the concentration distribution of each species-Ga, In, As, P-independently of each others with a precision of ±5%. It is verified that the composition of the interface is GaxIn1-xAs yP1-y (0≤x, y≤1). Owing to differences between the atomic diffusions of III- and V-type elements, the transition region can be subdivided into three regions having the following compositions: (i) GaAs yP1-y with 0.87≤y≤1; (ii) GaxIn 1-xAsyP1-y with 0≤y≤0.87 and 0.24≤x<1; (iii) PGaxIn1-x with x<0.24. The width of each region is also indicated.

Original languageEnglish (US)
Pages (from-to)3598-3601
Number of pages4
JournalJournal of Applied Physics
Volume59
Issue number10
DOIs
StatePublished - Dec 1 1986

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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