Conductance studies in a double-bend quantum structure

M. Hannan; R. W. Giannetta; R. Grundbacher; I. Adesida; J. Eom; V. Chandrasekhar

doi:10.1006/spmi.1996.0099

Conductance studies in a double-bend quantum structure

M. Hannan^*, R. W. Giannetta, R. Grundbacher, I. Adesida, J. Eom, V. Chandrasekhar

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Transport phenomena in a double-bend quantum structure fabricated in the two-dimensional electron gas of a modulation doped GaAs/AlGaAs structure, are studied experimentally. The structure consists of an electrostatically defined quantum dot with two one-dimensional wires connected on opposite corners of the dot. The current-voltage characteristics of such devices exhibit quantized conductance breakdown (non-linear behavior), conductance variation with confinement, and non-linear and asymmetric behavior at high bias condition. Low temperature conductance of this structure shows evidence of resonant tunneling, while the peaks of the conductance vary with temperature.

Original language	English (US)
Pages (from-to)	427-433
Number of pages	7
Journal	Superlattices and Microstructures
Volume	20
Issue number	4
DOIs	https://doi.org/10.1006/spmi.1996.0099
State	Published - 1996

Funding

Acknowledgements—The authors gratefully acknowledge the useful discussion of P. W. Phillips and M. Arafa. This work was supported by NSF grant No. ECS 92-02294 and JSEP Grant No. N00014-90-J-1270. Work at Northwestern was supported by the NSF under grant DMR-9357506 and 9313726, the Materials Research Center at Northwestern University, and the A. P. Sloan and Packard Foundations.

Keywords

Conductance
Double-bend
GaAs/AlGaAs

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.1996.0099

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title = "Conductance studies in a double-bend quantum structure",

abstract = "Transport phenomena in a double-bend quantum structure fabricated in the two-dimensional electron gas of a modulation doped GaAs/AlGaAs structure, are studied experimentally. The structure consists of an electrostatically defined quantum dot with two one-dimensional wires connected on opposite corners of the dot. The current-voltage characteristics of such devices exhibit quantized conductance breakdown (non-linear behavior), conductance variation with confinement, and non-linear and asymmetric behavior at high bias condition. Low temperature conductance of this structure shows evidence of resonant tunneling, while the peaks of the conductance vary with temperature.",

keywords = "Conductance, Double-bend, GaAs/AlGaAs",

author = "M. Hannan and Giannetta, {R. W.} and R. Grundbacher and I. Adesida and J. Eom and V. Chandrasekhar",

note = "Funding Information: Acknowledgements—The authors gratefully acknowledge the useful discussion of P. W. Phillips and M. Arafa. This work was supported by NSF grant No. ECS 92-02294 and JSEP Grant No. N00014-90-J-1270. Work at Northwestern was supported by the NSF under grant DMR-9357506 and 9313726, the Materials Research Center at Northwestern University, and the A. P. Sloan and Packard Foundations. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",

year = "1996",

doi = "10.1006/spmi.1996.0099",

language = "English (US)",

volume = "20",

pages = "427--433",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

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TY - JOUR

T1 - Conductance studies in a double-bend quantum structure

AU - Hannan, M.

AU - Giannetta, R. W.

AU - Grundbacher, R.

AU - Adesida, I.

AU - Eom, J.

AU - Chandrasekhar, V.

N1 - Funding Information: Acknowledgements—The authors gratefully acknowledge the useful discussion of P. W. Phillips and M. Arafa. This work was supported by NSF grant No. ECS 92-02294 and JSEP Grant No. N00014-90-J-1270. Work at Northwestern was supported by the NSF under grant DMR-9357506 and 9313726, the Materials Research Center at Northwestern University, and the A. P. Sloan and Packard Foundations. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 1996

Y1 - 1996

N2 - Transport phenomena in a double-bend quantum structure fabricated in the two-dimensional electron gas of a modulation doped GaAs/AlGaAs structure, are studied experimentally. The structure consists of an electrostatically defined quantum dot with two one-dimensional wires connected on opposite corners of the dot. The current-voltage characteristics of such devices exhibit quantized conductance breakdown (non-linear behavior), conductance variation with confinement, and non-linear and asymmetric behavior at high bias condition. Low temperature conductance of this structure shows evidence of resonant tunneling, while the peaks of the conductance vary with temperature.

AB - Transport phenomena in a double-bend quantum structure fabricated in the two-dimensional electron gas of a modulation doped GaAs/AlGaAs structure, are studied experimentally. The structure consists of an electrostatically defined quantum dot with two one-dimensional wires connected on opposite corners of the dot. The current-voltage characteristics of such devices exhibit quantized conductance breakdown (non-linear behavior), conductance variation with confinement, and non-linear and asymmetric behavior at high bias condition. Low temperature conductance of this structure shows evidence of resonant tunneling, while the peaks of the conductance vary with temperature.

KW - Conductance

KW - Double-bend

KW - GaAs/AlGaAs

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DO - 10.1006/spmi.1996.0099

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JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4

ER -

Conductance studies in a double-bend quantum structure

Abstract

Funding

Keywords

ASJC Scopus subject areas

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