Conduction- and valence-band offsets in GaAs/Ga0.51In 0.49P single quantum wells grown by metalorganic chemical vapor deposition

D. Biswas*, N. Debbar, P. Bhattacharya, M. Razeghi, M. Defour, F. Omnes

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

119 Scopus citations


We have independently estimated the conduction- and valence-band offsets ΔEc and ΔEv in GaAs/Ga0.51In 0.49P quantum wells by measuring the capacitance transient resulting from thermal emission of carriers from the respective wells. The heterostructure samples were grown by low-pressure metalorganic chemical vapor deposition. The band offsets are extrapolated from the emission activation energies with appropriate corrections. The estimated values of ΔEc and ΔEv are 0.198 and 0.285 eV, respectively.

Original languageEnglish (US)
Pages (from-to)833-835
Number of pages3
JournalApplied Physics Letters
Issue number9
StatePublished - 1990

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Conduction- and valence-band offsets in GaAs/Ga<sub>0.51</sub>In <sub>0.49</sub>P single quantum wells grown by metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this