Conduction- and valence-band offsets in GaAs/Ga0.51In 0.49P single quantum wells grown by metalorganic chemical vapor deposition

D. Biswas; N. Debbar; P. Bhattacharya; M. Razeghi; M. Defour; F. Omnes

doi:10.1063/1.102677

Conduction- and valence-band offsets in GaAs/Ga_0.51In _0.49P single quantum wells grown by metalorganic chemical vapor deposition

D. Biswas^*, N. Debbar, P. Bhattacharya, M. Razeghi, M. Defour, F. Omnes

^*Corresponding author for this work

Electrical and Computer Engineering

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123 Scopus citations

Abstract

We have independently estimated the conduction- and valence-band offsets ΔE_c and ΔE_v in GaAs/Ga_0.51In _0.49P quantum wells by measuring the capacitance transient resulting from thermal emission of carriers from the respective wells. The heterostructure samples were grown by low-pressure metalorganic chemical vapor deposition. The band offsets are extrapolated from the emission activation energies with appropriate corrections. The estimated values of ΔE_c and ΔE_v are 0.198 and 0.285 eV, respectively.

Original language	English (US)
Pages (from-to)	833-835
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	9
DOIs	https://doi.org/10.1063/1.102677
State	Published - 1990

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Physics and Astronomy (miscellaneous)

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title = "Conduction- and valence-band offsets in GaAs/Ga0.51In 0.49P single quantum wells grown by metalorganic chemical vapor deposition",

abstract = "We have independently estimated the conduction- and valence-band offsets ΔEc and ΔEv in GaAs/Ga0.51In 0.49P quantum wells by measuring the capacitance transient resulting from thermal emission of carriers from the respective wells. The heterostructure samples were grown by low-pressure metalorganic chemical vapor deposition. The band offsets are extrapolated from the emission activation energies with appropriate corrections. The estimated values of ΔEc and ΔEv are 0.198 and 0.285 eV, respectively.",

author = "D. Biswas and N. Debbar and P. Bhattacharya and M. Razeghi and M. Defour and F. Omnes",

year = "1990",

doi = "10.1063/1.102677",

language = "English (US)",

volume = "56",

pages = "833--835",

journal = "Applied Physics Letters",

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T1 - Conduction- and valence-band offsets in GaAs/Ga0.51In 0.49P single quantum wells grown by metalorganic chemical vapor deposition

AU - Biswas, D.

AU - Debbar, N.

AU - Bhattacharya, P.

AU - Razeghi, M.

AU - Defour, M.

AU - Omnes, F.

PY - 1990

Y1 - 1990

N2 - We have independently estimated the conduction- and valence-band offsets ΔEc and ΔEv in GaAs/Ga0.51In 0.49P quantum wells by measuring the capacitance transient resulting from thermal emission of carriers from the respective wells. The heterostructure samples were grown by low-pressure metalorganic chemical vapor deposition. The band offsets are extrapolated from the emission activation energies with appropriate corrections. The estimated values of ΔEc and ΔEv are 0.198 and 0.285 eV, respectively.

AB - We have independently estimated the conduction- and valence-band offsets ΔEc and ΔEv in GaAs/Ga0.51In 0.49P quantum wells by measuring the capacitance transient resulting from thermal emission of carriers from the respective wells. The heterostructure samples were grown by low-pressure metalorganic chemical vapor deposition. The band offsets are extrapolated from the emission activation energies with appropriate corrections. The estimated values of ΔEc and ΔEv are 0.198 and 0.285 eV, respectively.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Conduction- and valence-band offsets in GaAs/Ga_0.51In _0.49P single quantum wells grown by metalorganic chemical vapor deposition

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