Conductive atomic force microscope nanopatterning of hydrogen-passivated silicon in inert organic solvents

C. Reagan Kinser; Matthew J. Schmitz; Mark C. Hersam

doi:10.1021/nl048275q

Conductive atomic force microscope nanopatterning of hydrogen-passivated silicon in inert organic solvents

C. Reagan Kinser, Matthew J. Schmitz, Mark C. Hersam^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Ambient liquid phase atomic force microscope (AFM) techniques for nanopatterning organic molecules on silicon through direct Si-C bonds rely on reactions that are in direct competition with spurious oxidation. We study the effectiveness of an inert hydrophobic organic solvent at suppressing oxidation of hydrogen-passivated silicon under ambient conditions. Nanometer scale features were fabricated on an H:Si(111) substrate using a conductive AFM in hexadecane. The patterned features show chemical and kinetic behavior consistent with field induced oxidation (FIO) in air. The mechanism for FIO in hexadecane is discussed.

Original language	English (US)
Pages (from-to)	91-95
Number of pages	5
Journal	Nano letters
Volume	5
Issue number	1
DOIs	https://doi.org/10.1021/nl048275q
State	Published - Jan 2005
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Mechanical Engineering
Bioengineering
General Chemistry
General Materials Science

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10.1021/nl048275q

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abstract = "Ambient liquid phase atomic force microscope (AFM) techniques for nanopatterning organic molecules on silicon through direct Si-C bonds rely on reactions that are in direct competition with spurious oxidation. We study the effectiveness of an inert hydrophobic organic solvent at suppressing oxidation of hydrogen-passivated silicon under ambient conditions. Nanometer scale features were fabricated on an H:Si(111) substrate using a conductive AFM in hexadecane. The patterned features show chemical and kinetic behavior consistent with field induced oxidation (FIO) in air. The mechanism for FIO in hexadecane is discussed.",

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Conductive atomic force microscope nanopatterning of hydrogen-passivated silicon in inert organic solvents

Abstract

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