Abstract
The dominant point defect mechanism of amorphous (a-) indium zinc oxide (IZO) was probed through in situ electrical characterization of sputtered a-IZO thin films in response to changes in oxygen partial pressure (pO2) at 300°C. The results yielded a power law dependence of conductivity (σ) versus pO2 of ∼1/6. This experimental method, known as Brouwer analysis, confirms doubly-charged oxygen vacancies as the dominant defect species in a-IZO. The success of this study suggests that Brouwer analysis is a viable method for studying the defect mechanisms of amorphous oxides.
Original language | English (US) |
---|---|
Pages (from-to) | 2099-2103 |
Number of pages | 5 |
Journal | Journal of the American Ceramic Society |
Volume | 98 |
Issue number | 7 |
DOIs | |
State | Published - Jul 1 2015 |
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry