The dominant point defect mechanism of amorphous (a-) indium zinc oxide (IZO) was probed through in situ electrical characterization of sputtered a-IZO thin films in response to changes in oxygen partial pressure (pO2) at 300°C. The results yielded a power law dependence of conductivity (σ) versus pO2 of ∼1/6. This experimental method, known as Brouwer analysis, confirms doubly-charged oxygen vacancies as the dominant defect species in a-IZO. The success of this study suggests that Brouwer analysis is a viable method for studying the defect mechanisms of amorphous oxides.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of the American Ceramic Society|
|State||Published - Jul 1 2015|
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry