Confirmation of the Dominant Defect Mechanism in Amorphous In-Zn-O Through the Application of in Situ Brouwer Analysis

Stephanie L. Moffitt; Alexander U. Adler; Thomas Gennett; David S. Ginley; John D. Perkins; Thomas O. Mason

doi:10.1111/jace.13518

Confirmation of the Dominant Defect Mechanism in Amorphous In-Zn-O Through the Application of in Situ Brouwer Analysis

Stephanie L. Moffitt, Alexander U. Adler, Thomas Gennett, David S. Ginley, John D. Perkins, Thomas O. Mason^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The dominant point defect mechanism of amorphous (a-) indium zinc oxide (IZO) was probed through in situ electrical characterization of sputtered a-IZO thin films in response to changes in oxygen partial pressure (pO2) at 300°C. The results yielded a power law dependence of conductivity (σ) versus pO2 of ∼1/6. This experimental method, known as Brouwer analysis, confirms doubly-charged oxygen vacancies as the dominant defect species in a-IZO. The success of this study suggests that Brouwer analysis is a viable method for studying the defect mechanisms of amorphous oxides.

Original language	English (US)
Pages (from-to)	2099-2103
Number of pages	5
Journal	Journal of the American Ceramic Society
Volume	98
Issue number	7
DOIs	https://doi.org/10.1111/jace.13518
State	Published - Jul 1 2015

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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@article{55adf2a5edfe49c88f27f67136e5fa25,

title = "Confirmation of the Dominant Defect Mechanism in Amorphous In-Zn-O Through the Application of in Situ Brouwer Analysis",

abstract = "The dominant point defect mechanism of amorphous (a-) indium zinc oxide (IZO) was probed through in situ electrical characterization of sputtered a-IZO thin films in response to changes in oxygen partial pressure (pO2) at 300°C. The results yielded a power law dependence of conductivity (σ) versus pO2 of ∼1/6. This experimental method, known as Brouwer analysis, confirms doubly-charged oxygen vacancies as the dominant defect species in a-IZO. The success of this study suggests that Brouwer analysis is a viable method for studying the defect mechanisms of amorphous oxides.",

author = "Moffitt, {Stephanie L.} and Adler, {Alexander U.} and Thomas Gennett and Ginley, {David S.} and Perkins, {John D.} and Mason, {Thomas O.}",

note = "Publisher Copyright: {\textcopyright} 2015 The American Ceramic Society.",

year = "2015",

month = jul,

day = "1",

doi = "10.1111/jace.13518",

language = "English (US)",

volume = "98",

pages = "2099--2103",

journal = "Journal of the American Ceramic Society",

issn = "0002-7820",

publisher = "Wiley-Blackwell",

number = "7",

}

TY - JOUR

T1 - Confirmation of the Dominant Defect Mechanism in Amorphous In-Zn-O Through the Application of in Situ Brouwer Analysis

AU - Moffitt, Stephanie L.

AU - Adler, Alexander U.

AU - Gennett, Thomas

AU - Ginley, David S.

AU - Perkins, John D.

AU - Mason, Thomas O.

PY - 2015/7/1

Y1 - 2015/7/1

N2 - The dominant point defect mechanism of amorphous (a-) indium zinc oxide (IZO) was probed through in situ electrical characterization of sputtered a-IZO thin films in response to changes in oxygen partial pressure (pO2) at 300°C. The results yielded a power law dependence of conductivity (σ) versus pO2 of ∼1/6. This experimental method, known as Brouwer analysis, confirms doubly-charged oxygen vacancies as the dominant defect species in a-IZO. The success of this study suggests that Brouwer analysis is a viable method for studying the defect mechanisms of amorphous oxides.

AB - The dominant point defect mechanism of amorphous (a-) indium zinc oxide (IZO) was probed through in situ electrical characterization of sputtered a-IZO thin films in response to changes in oxygen partial pressure (pO2) at 300°C. The results yielded a power law dependence of conductivity (σ) versus pO2 of ∼1/6. This experimental method, known as Brouwer analysis, confirms doubly-charged oxygen vacancies as the dominant defect species in a-IZO. The success of this study suggests that Brouwer analysis is a viable method for studying the defect mechanisms of amorphous oxides.

UR - http://www.scopus.com/inward/record.url?scp=85027917249&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027917249&partnerID=8YFLogxK

U2 - 10.1111/jace.13518

DO - 10.1111/jace.13518

M3 - Article

AN - SCOPUS:85027917249

SN - 0002-7820

VL - 98

SP - 2099

EP - 2103

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 7

ER -

Confirmation of the Dominant Defect Mechanism in Amorphous In-Zn-O Through the Application of in Situ Brouwer Analysis

Abstract

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