Consequences of anode interfacial layer deletion. HCl-treated ITO in P3HT:PCBM-based bulk-heterojunction organic photovoltaic devices

Michael D. Irwin; Jun Liu; Benjamin J. Leever; Jonathan D. Servaites; Mark C. Hersam; Michael F. Durstock; Tobin J. Marks

doi:10.1021/la902879h

Consequences of anode interfacial layer deletion. HCl-treated ITO in P3HT:PCBM-based bulk-heterojunction organic photovoltaic devices

Michael D. Irwin, Jun Liu, Benjamin J. Leever, Jonathan D. Servaites, Mark C. Hersam, Michael F. Durstock, Tobin J. Marks

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

In studies to simplify the fabrication of bulk-heterojunction organic photovoltaic (OPV) devices, it was found that when glass/tin-doped indium oxide (ITO) substrates are treated with dilute aqueous HCl solutions, followed by UV ozone (UVO), and then used to fabricate devices of the structure glass/ITO/P3HT:PCBM/LiF/Al, device performance is greatly enhanced. Light-to-power conversion efficiency (Eff) increases from 2.4% for control devices in which the ITO surface is treated only with UVO to 3.8% with the HCl + UVO treatment-effectively matching the performance of an identical device having a PEDOT:PSS anode interfacial layer. The enhancement originates from increases in V_OC from 463 to 554 mV and FF from 49% to 66%. The modified-ITO device also exhibits a 4× enhancement in thermal stability versus an identical device containing a PEDOT:PSS anode interfacial layer. To understand the origins of these effects, the ITO surface is analyzed as a function of treatment by ultraviolet photoelectron spectroscopy work function measurements, X-ray photoelectron spectroscopic composition analysis, and atomic force microscopic topography and conductivity imaging. Additionally, a diode-based device model is employed to further understand the effects of ITO surface treatment on device performance.

Original language	English (US)
Pages (from-to)	2584-2591
Number of pages	8
Journal	Langmuir
Volume	26
Issue number	4
DOIs	https://doi.org/10.1021/la902879h
State	Published - Feb 16 2010

ASJC Scopus subject areas

Condensed Matter Physics
Spectroscopy
General Materials Science
Surfaces and Interfaces
Electrochemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1021/la902879h

Cite this

@article{56aa2370461c482e8dd74e2e7308bef7,

title = "Consequences of anode interfacial layer deletion. HCl-treated ITO in P3HT:PCBM-based bulk-heterojunction organic photovoltaic devices",

abstract = "In studies to simplify the fabrication of bulk-heterojunction organic photovoltaic (OPV) devices, it was found that when glass/tin-doped indium oxide (ITO) substrates are treated with dilute aqueous HCl solutions, followed by UV ozone (UVO), and then used to fabricate devices of the structure glass/ITO/P3HT:PCBM/LiF/Al, device performance is greatly enhanced. Light-to-power conversion efficiency (Eff) increases from 2.4% for control devices in which the ITO surface is treated only with UVO to 3.8% with the HCl + UVO treatment-effectively matching the performance of an identical device having a PEDOT:PSS anode interfacial layer. The enhancement originates from increases in VOC from 463 to 554 mV and FF from 49% to 66%. The modified-ITO device also exhibits a 4× enhancement in thermal stability versus an identical device containing a PEDOT:PSS anode interfacial layer. To understand the origins of these effects, the ITO surface is analyzed as a function of treatment by ultraviolet photoelectron spectroscopy work function measurements, X-ray photoelectron spectroscopic composition analysis, and atomic force microscopic topography and conductivity imaging. Additionally, a diode-based device model is employed to further understand the effects of ITO surface treatment on device performance.",

author = "Irwin, {Michael D.} and Jun Liu and Leever, {Benjamin J.} and Servaites, {Jonathan D.} and Hersam, {Mark C.} and Durstock, {Michael F.} and Marks, {Tobin J.}",

year = "2010",

month = feb,

day = "16",

doi = "10.1021/la902879h",

language = "English (US)",

volume = "26",

pages = "2584--2591",

journal = "Langmuir",

issn = "0743-7463",

publisher = "American Chemical Society",

number = "4",

}

TY - JOUR

T1 - Consequences of anode interfacial layer deletion. HCl-treated ITO in P3HT:PCBM-based bulk-heterojunction organic photovoltaic devices

AU - Irwin, Michael D.

AU - Liu, Jun

AU - Leever, Benjamin J.

AU - Servaites, Jonathan D.

AU - Hersam, Mark C.

AU - Durstock, Michael F.

AU - Marks, Tobin J.

PY - 2010/2/16

Y1 - 2010/2/16

N2 - In studies to simplify the fabrication of bulk-heterojunction organic photovoltaic (OPV) devices, it was found that when glass/tin-doped indium oxide (ITO) substrates are treated with dilute aqueous HCl solutions, followed by UV ozone (UVO), and then used to fabricate devices of the structure glass/ITO/P3HT:PCBM/LiF/Al, device performance is greatly enhanced. Light-to-power conversion efficiency (Eff) increases from 2.4% for control devices in which the ITO surface is treated only with UVO to 3.8% with the HCl + UVO treatment-effectively matching the performance of an identical device having a PEDOT:PSS anode interfacial layer. The enhancement originates from increases in VOC from 463 to 554 mV and FF from 49% to 66%. The modified-ITO device also exhibits a 4× enhancement in thermal stability versus an identical device containing a PEDOT:PSS anode interfacial layer. To understand the origins of these effects, the ITO surface is analyzed as a function of treatment by ultraviolet photoelectron spectroscopy work function measurements, X-ray photoelectron spectroscopic composition analysis, and atomic force microscopic topography and conductivity imaging. Additionally, a diode-based device model is employed to further understand the effects of ITO surface treatment on device performance.

AB - In studies to simplify the fabrication of bulk-heterojunction organic photovoltaic (OPV) devices, it was found that when glass/tin-doped indium oxide (ITO) substrates are treated with dilute aqueous HCl solutions, followed by UV ozone (UVO), and then used to fabricate devices of the structure glass/ITO/P3HT:PCBM/LiF/Al, device performance is greatly enhanced. Light-to-power conversion efficiency (Eff) increases from 2.4% for control devices in which the ITO surface is treated only with UVO to 3.8% with the HCl + UVO treatment-effectively matching the performance of an identical device having a PEDOT:PSS anode interfacial layer. The enhancement originates from increases in VOC from 463 to 554 mV and FF from 49% to 66%. The modified-ITO device also exhibits a 4× enhancement in thermal stability versus an identical device containing a PEDOT:PSS anode interfacial layer. To understand the origins of these effects, the ITO surface is analyzed as a function of treatment by ultraviolet photoelectron spectroscopy work function measurements, X-ray photoelectron spectroscopic composition analysis, and atomic force microscopic topography and conductivity imaging. Additionally, a diode-based device model is employed to further understand the effects of ITO surface treatment on device performance.

UR - http://www.scopus.com/inward/record.url?scp=77149129893&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77149129893&partnerID=8YFLogxK

U2 - 10.1021/la902879h

DO - 10.1021/la902879h

M3 - Article

C2 - 20014804

AN - SCOPUS:77149129893

SN - 0743-7463

VL - 26

SP - 2584

EP - 2591

JO - Langmuir

JF - Langmuir

IS - 4

ER -

Consequences of anode interfacial layer deletion. HCl-treated ITO in P3HT:PCBM-based bulk-heterojunction organic photovoltaic devices

Abstract

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this