Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination

Jana Zaumseil*, Kirk W. Baldwin, John A. Rogers

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

285 Scopus citations

Abstract

The contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination was studied. The models developed for characterizing amorphous silicon transistors was used for the analysis. It was found that the soft contact lamination of source/drain electrodes supported by gold-coated high-resolution rubber stamps against semiconductor films yielded high-performance organic transistors.

Original languageEnglish (US)
Pages (from-to)6117-6124
Number of pages8
JournalJournal of Applied Physics
Volume93
Issue number10 1
DOIs
StatePublished - May 15 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination'. Together they form a unique fingerprint.

Cite this