Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination

Jana Zaumseil; Kirk W. Baldwin; John A. Rogers

doi:10.1063/1.1568157

Contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination

Jana Zaumseil^*, Kirk W. Baldwin, John A. Rogers

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

285 Scopus citations

Abstract

The contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination was studied. The models developed for characterizing amorphous silicon transistors was used for the analysis. It was found that the soft contact lamination of source/drain electrodes supported by gold-coated high-resolution rubber stamps against semiconductor films yielded high-performance organic transistors.

Original language	English (US)
Pages (from-to)	6117-6124
Number of pages	8
Journal	Journal of Applied Physics
Volume	93
Issue number	10 1
DOIs	https://doi.org/10.1063/1.1568157
State	Published - May 15 2003

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1568157

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abstract = "The contact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination was studied. The models developed for characterizing amorphous silicon transistors was used for the analysis. It was found that the soft contact lamination of source/drain electrodes supported by gold-coated high-resolution rubber stamps against semiconductor films yielded high-performance organic transistors.",

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