Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition

Manijeh Razeghi; A. Saxler; P. Kung; D. Walker; X. Zhang; A. Rybaltowski; Y. Xiao; H. Yi; J. Diaz

doi:10.1117/12.304463

Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition

Manijeh Razeghi^*, A. Saxler, P. Kung, D. Walker, X. Zhang, A. Rybaltowski, Y. Xiao, H. Yi, J. Diaz

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Continuous-wave (CW) room temperature operation of InGaN/GaN multi-quantum well (MQW) lasers is reported. Far-field beam divergence as narrow as 13° and 20° for parallel and perpendicular directions to epilayer planes were measured, respectively. The MQW lasers showed strong beam polarization anisotropy as consistent with QW laser gain theory. Dependencies of threshold current on cavity-length and temperature are also consistent with conventional laser theory. No significant degradation in laser characteristics was observed during lifetime testing for over 140 hours of CW room temperature operation.

Original language	English (US)
Pages (from-to)	113-121
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3284
DOIs	https://doi.org/10.1117/12.304463
State	Published - Dec 1 1998
Event	In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II - San Jose, CA, United States Duration: Jan 26 1998 → Jan 28 1998

Keywords

Blue lasers
Far-field
GaN
Lifetime
MOCVD

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.304463

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Razeghi, M., Saxler, A., Kung, P., Walker, D., Zhang, X., Rybaltowski, A., Xiao, Y., Yi, H., & Diaz, J. (1998). Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition. Proceedings of SPIE - The International Society for Optical Engineering, 3284, 113-121. https://doi.org/10.1117/12.304463

@article{cb304c46071f4bc4b365fba18d407ae0,

title = "Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition",

abstract = "Continuous-wave (CW) room temperature operation of InGaN/GaN multi-quantum well (MQW) lasers is reported. Far-field beam divergence as narrow as 13° and 20° for parallel and perpendicular directions to epilayer planes were measured, respectively. The MQW lasers showed strong beam polarization anisotropy as consistent with QW laser gain theory. Dependencies of threshold current on cavity-length and temperature are also consistent with conventional laser theory. No significant degradation in laser characteristics was observed during lifetime testing for over 140 hours of CW room temperature operation.",

keywords = "Blue lasers, Far-field, GaN, Lifetime, MOCVD",

author = "Manijeh Razeghi and A. Saxler and P. Kung and D. Walker and X. Zhang and A. Rybaltowski and Y. Xiao and H. Yi and J. Diaz",

year = "1998",

month = dec,

day = "1",

doi = "10.1117/12.304463",

language = "English (US)",

volume = "3284",

pages = "113--121",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II ; Conference date: 26-01-1998 Through 28-01-1998",

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Razeghi, M, Saxler, A, Kung, P, Walker, D, Zhang, X, Rybaltowski, A, Xiao, Y, Yi, H & Diaz, J 1998, 'Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition', Proceedings of SPIE - The International Society for Optical Engineering, vol. 3284, pp. 113-121. https://doi.org/10.1117/12.304463

Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition. / Razeghi, Manijeh; Saxler, A.; Kung, P. et al.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3284, 01.12.1998, p. 113-121.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition

AU - Razeghi, Manijeh

AU - Saxler, A.

AU - Kung, P.

AU - Walker, D.

AU - Zhang, X.

AU - Rybaltowski, A.

AU - Xiao, Y.

AU - Yi, H.

AU - Diaz, J.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Continuous-wave (CW) room temperature operation of InGaN/GaN multi-quantum well (MQW) lasers is reported. Far-field beam divergence as narrow as 13° and 20° for parallel and perpendicular directions to epilayer planes were measured, respectively. The MQW lasers showed strong beam polarization anisotropy as consistent with QW laser gain theory. Dependencies of threshold current on cavity-length and temperature are also consistent with conventional laser theory. No significant degradation in laser characteristics was observed during lifetime testing for over 140 hours of CW room temperature operation.

AB - Continuous-wave (CW) room temperature operation of InGaN/GaN multi-quantum well (MQW) lasers is reported. Far-field beam divergence as narrow as 13° and 20° for parallel and perpendicular directions to epilayer planes were measured, respectively. The MQW lasers showed strong beam polarization anisotropy as consistent with QW laser gain theory. Dependencies of threshold current on cavity-length and temperature are also consistent with conventional laser theory. No significant degradation in laser characteristics was observed during lifetime testing for over 140 hours of CW room temperature operation.

KW - Blue lasers

KW - Far-field

KW - GaN

KW - Lifetime

KW - MOCVD

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DO - 10.1117/12.304463

M3 - Conference article

AN - SCOPUS:0032225384

SN - 0277-786X

VL - 3284

SP - 113

EP - 121

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II

Y2 - 26 January 1998 through 28 January 1998

ER -

Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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