Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by low-pressure metalorganic chemical vapor deposition

Manijeh Razeghi*, A. Saxler, P. Kung, D. Walker, X. Zhang, A. Rybaltowski, Y. Xiao, H. Yi, J. Diaz

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

Continuous-wave (CW) room temperature operation of InGaN/GaN multi-quantum well (MQW) lasers is reported. Far-field beam divergence as narrow as 13° and 20° for parallel and perpendicular directions to epilayer planes were measured, respectively. The MQW lasers showed strong beam polarization anisotropy as consistent with QW laser gain theory. Dependencies of threshold current on cavity-length and temperature are also consistent with conventional laser theory. No significant degradation in laser characteristics was observed during lifetime testing for over 140 hours of CW room temperature operation.

Original languageEnglish (US)
Pages (from-to)113-121
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3284
DOIs
StatePublished - Dec 1 1998
EventIn-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II - San Jose, CA, United States
Duration: Jan 26 1998Jan 28 1998

Keywords

  • Blue lasers
  • Far-field
  • GaN
  • Lifetime
  • MOCVD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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