We have grown Sb2Te3 thin films on CdTe(111)B and GaAs(111)B substrates by the conventional co-deposition method using molecular beam epitaxy. In order to investigate and reduce the antisite defects, we varied the relative ratio of the flow-rates of Sb and Te. X-ray diffraction patterns (θ-2θ scans) of the films show that they are well aligned with their (00.l) axis normal to the substrates, regardless of the relative flow-rate ratio. The measurement of the rocking curves of the films shows that they are of high quality, despite a rather large lattice mismatch between the substrate and the film deposited at 200 °C, with a rocking curve FWHM less than 0.17°. The change in the relative flow-rate ratios of Te to Sb causes a remarkable shift in the temperature-dependent thermopower, resistivity, and Hall coefficient of the films. These results demonstrate that by controlling the antisite defects, Sb2Te3 can be a promising thermoelectric material.
|Original language||English (US)|
|Number of pages||4|
|Journal||International Conference on Thermoelectrics, ICT, Proceedings|
|State||Published - Dec 1 1999|
|Event||18th International Conference on Thermoelectrics (ICT'99) - Baltimore, MD, USA|
Duration: Aug 29 1999 → Sep 2 1999
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