Control of antisite defect effect of Sb2Te3 thin films

Yunki Kim*, Sunglae Cho, Antonio DiVenere, George K. Wong, John B Ketterson, Jerry R. Meyer

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


We have grown Sb2Te3 thin films on CdTe(111)B and GaAs(111)B substrates by the conventional co-deposition method using molecular beam epitaxy. In order to investigate and reduce the antisite defects, we varied the relative ratio of the flow-rates of Sb and Te. X-ray diffraction patterns (θ-2θ scans) of the films show that they are well aligned with their (00.l) axis normal to the substrates, regardless of the relative flow-rate ratio. The measurement of the rocking curves of the films shows that they are of high quality, despite a rather large lattice mismatch between the substrate and the film deposited at 200 °C, with a rocking curve FWHM less than 0.17°. The change in the relative flow-rate ratios of Te to Sb causes a remarkable shift in the temperature-dependent thermopower, resistivity, and Hall coefficient of the films. These results demonstrate that by controlling the antisite defects, Sb2Te3 can be a promising thermoelectric material.

Original languageEnglish (US)
Pages (from-to)700-703
Number of pages4
JournalInternational Conference on Thermoelectrics, ICT, Proceedings
StatePublished - Dec 1 1999
Event18th International Conference on Thermoelectrics (ICT'99) - Baltimore, MD, USA
Duration: Aug 29 1999Sep 2 1999

ASJC Scopus subject areas

  • Engineering(all)


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