Abstract
It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers-depending on the balance between spin-orbit interaction and interlayer hopping. This balance depends on the layer thickness, momentum space symmetry points, and applied gate fields. The design range of this balance, the effective Fermi levels, and all relevant effective masses is analyzed in great detail. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as the major source for the observed photoluminescence.
Original language | English (US) |
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Article number | 224302 |
Journal | Journal of Applied Physics |
Volume | 122 |
Issue number | 22 |
DOIs | |
State | Published - Dec 14 2017 |
Funding
The work was supported by the NSF EFRI-1433510. We also acknowledge the Rosen Center for Advanced Computing at the Purdue University for the use of their computing resources and technical support. This research is a part of the Blue Waters sustained-petascale computing project, which is supported by the National Science Foundation (Award No. ACI 1238993) and the state of Illinois. Blue Waters is a joint effort of the University of Illinois at Urbana-Champaign and its National Center for Supercomputing Applications. This work was also a part of the Accelerating Nano-scale Transistor Innovation with NEMO5 on Blue Waters PRAC allocation support by the National Science Foundation (Award No. OCI-0832623). This work was partially supported by the National Science Foundation\u2019s MRSEC program (DMR-1121262) and made use of its Shared Facilities at the Materials Research Center of the Northwestern University. This work made use of the EPIC facility of the Northwestern University\u2019s NUANCE Center and the NUFAB facility, which have received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF ECCS-1542205), the MRSEC program (NSF DMR-1121262) at the Materials Research Center, the International Institute for Nanotechnology (IIN), the Keck Foundation, and the State of Illinois. N.P.S. acknowledges support as an Alfred P. Sloan Research Fellow. J.M. acknowledges support from the NSERC.
ASJC Scopus subject areas
- General Physics and Astronomy