Control of interlayer physics in 2H transition metal dichalcogenides

Kuang Chung Wang; Teodor K. Stanev; Daniel Valencia; James Charles; Alex Henning; Vinod K. Sangwan; Aritra Lahiri; Daniel Mejia; Prasad Sarangapani; Michael Povolotskyi; Aryan Afzalian; Jesse Maassen; Gerhard Klimeck; Mark C. Hersam; Lincoln J. Lauhon; Nathaniel P. Stern; Tillmann Kubis

doi:10.1063/1.5005958

Control of interlayer physics in 2H transition metal dichalcogenides

Kuang Chung Wang^*, Teodor K. Stanev, Daniel Valencia, James Charles, Alex Henning, Vinod K. Sangwan, Aritra Lahiri, Daniel Mejia, Prasad Sarangapani, Michael Povolotskyi, Aryan Afzalian, Jesse Maassen, Gerhard Klimeck, Mark C. Hersam, Lincoln J. Lauhon, Nathaniel P. Stern, Tillmann Kubis

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers-depending on the balance between spin-orbit interaction and interlayer hopping. This balance depends on the layer thickness, momentum space symmetry points, and applied gate fields. The design range of this balance, the effective Fermi levels, and all relevant effective masses is analyzed in great detail. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS₂ systems unveils intralayer excitons as the major source for the observed photoluminescence.

Original language	English (US)
Article number	224302
Journal	Journal of Applied Physics
Volume	122
Issue number	22
DOIs	https://doi.org/10.1063/1.5005958
State	Published - Dec 14 2017

ASJC Scopus subject areas

Physics and Astronomy(all)

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Wang, K. C., Stanev, T. K., Valencia, D., Charles, J., Henning, A., Sangwan, V. K., Lahiri, A., Mejia, D., Sarangapani, P., Povolotskyi, M., Afzalian, A., Maassen, J., Klimeck, G., Hersam, M. C., Lauhon, L. J., Stern, N. P., & Kubis, T. (2017). Control of interlayer physics in 2H transition metal dichalcogenides. Journal of Applied Physics, 122(22), Article 224302. https://doi.org/10.1063/1.5005958

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title = "Control of interlayer physics in 2H transition metal dichalcogenides",

abstract = "It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers-depending on the balance between spin-orbit interaction and interlayer hopping. This balance depends on the layer thickness, momentum space symmetry points, and applied gate fields. The design range of this balance, the effective Fermi levels, and all relevant effective masses is analyzed in great detail. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as the major source for the observed photoluminescence.",

author = "Wang, {Kuang Chung} and Stanev, {Teodor K.} and Daniel Valencia and James Charles and Alex Henning and Sangwan, {Vinod K.} and Aritra Lahiri and Daniel Mejia and Prasad Sarangapani and Michael Povolotskyi and Aryan Afzalian and Jesse Maassen and Gerhard Klimeck and Hersam, {Mark C.} and Lauhon, {Lincoln J.} and Stern, {Nathaniel P.} and Tillmann Kubis",

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Wang, KC, Stanev, TK, Valencia, D, Charles, J, Henning, A, Sangwan, VK, Lahiri, A, Mejia, D, Sarangapani, P, Povolotskyi, M, Afzalian, A, Maassen, J, Klimeck, G, Hersam, MC , Lauhon, LJ , Stern, NP & Kubis, T 2017, 'Control of interlayer physics in 2H transition metal dichalcogenides', Journal of Applied Physics, vol. 122, no. 22, 224302. https://doi.org/10.1063/1.5005958

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T1 - Control of interlayer physics in 2H transition metal dichalcogenides

AU - Wang, Kuang Chung

AU - Stanev, Teodor K.

AU - Valencia, Daniel

AU - Charles, James

AU - Henning, Alex

AU - Sangwan, Vinod K.

AU - Lahiri, Aritra

AU - Mejia, Daniel

AU - Sarangapani, Prasad

AU - Povolotskyi, Michael

AU - Afzalian, Aryan

AU - Maassen, Jesse

AU - Klimeck, Gerhard

AU - Hersam, Mark C.

AU - Lauhon, Lincoln J.

AU - Stern, Nathaniel P.

AU - Kubis, Tillmann

PY - 2017/12/14

Y1 - 2017/12/14

N2 - It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers-depending on the balance between spin-orbit interaction and interlayer hopping. This balance depends on the layer thickness, momentum space symmetry points, and applied gate fields. The design range of this balance, the effective Fermi levels, and all relevant effective masses is analyzed in great detail. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as the major source for the observed photoluminescence.

AB - It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers-depending on the balance between spin-orbit interaction and interlayer hopping. This balance depends on the layer thickness, momentum space symmetry points, and applied gate fields. The design range of this balance, the effective Fermi levels, and all relevant effective masses is analyzed in great detail. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as the major source for the observed photoluminescence.

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Control of interlayer physics in 2H transition metal dichalcogenides

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