Control of interlayer physics in 2H transition metal dichalcogenides

Kuang Chung Wang*, Teodor K. Stanev, Daniel Valencia, James Charles, Alex Henning, Vinod K. Sangwan, Aritra Lahiri, Daniel Mejia, Prasad Sarangapani, Michael Povolotskyi, Aryan Afzalian, Jesse Maassen, Gerhard Klimeck, Mark C. Hersam, Lincoln J. Lauhon, Nathaniel P. Stern, Tillmann Kubis

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers-depending on the balance between spin-orbit interaction and interlayer hopping. This balance depends on the layer thickness, momentum space symmetry points, and applied gate fields. The design range of this balance, the effective Fermi levels, and all relevant effective masses is analyzed in great detail. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as the major source for the observed photoluminescence.

Original languageEnglish (US)
Article number224302
JournalJournal of Applied Physics
Issue number22
StatePublished - Dec 14 2017

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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