Abstract
Cubic boron nitride (c-BN) films were deposited using radio-frequency (rf) magnetron sputtering. A type of turbostratic boron nitride (t-BN) growth was found by reducing the substrate bias during deposition. Transmission electron microscopy (TEM) study showed that the t-BN served as a different nucleation environment for c-BN compared to those reported in the literature by many other groups. The nucleation environment corresponded to a lower film internal stress level and thus facilitated the production of thicker c-BN films. The fraction of different t-BN/c-BN environments could be controlled and altered by varying the deposition conditions. The films containing different t-BN/c-BN environments were compared in phase concentration, stoichiometry, microstructure, and internal stress level. Additional insight was added to the film growth mechanism.
Original language | English (US) |
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Article number | 045415 |
Pages (from-to) | 454151-454157 |
Number of pages | 7 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 65 |
Issue number | 4 |
DOIs | |
State | Published - Jan 15 2002 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics