Controlling the nucleation environment of c-BN films and their related properties

Quan Li, L. D. Marks, Y. Lifshitz, S. T. Lee, I. Bello

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

Cubic boron nitride (c-BN) films were deposited using radio-frequency (rf) magnetron sputtering. A type of turbostratic boron nitride (t-BN) growth was found by reducing the substrate bias during deposition. Transmission electron microscopy (TEM) study showed that the t-BN served as a different nucleation environment for c-BN compared to those reported in the literature by many other groups. The nucleation environment corresponded to a lower film internal stress level and thus facilitated the production of thicker c-BN films. The fraction of different t-BN/c-BN environments could be controlled and altered by varying the deposition conditions. The films containing different t-BN/c-BN environments were compared in phase concentration, stoichiometry, microstructure, and internal stress level. Additional insight was added to the film growth mechanism.

Original languageEnglish (US)
Article number045415
Pages (from-to)454151-454157
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number4
DOIs
StatePublished - Jan 15 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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