Core-shell GaN-ZnO moth-eye nanostructure arrays grown on a-SiO2/Si (1 1 1) as a basis for improved InGaN-based photovoltaics and LEDs

D. J. Rogers*, V. E. Sandana, S. Gautier, T. Moudakir, M. Abid, A. Ougazzaden, F. Hosseini Teherani, P. Bove, M. Molinari, M. Troyon, M. Peres, Manuel J. Soares, A. J. Neves, T. Monteiro, D. McGrouther, J. N. Chapman, H. J. Drouhin, R. McClintock, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Self-forming, vertically-aligned, ZnO moth-eye-like nanoarrays were grown by catalyst-free pulsed laser deposition on a-SiO2/Si (1 1 1) substrates. X-Ray Diffraction (XRD) and Cathodoluminescence (CL) studies indicated that nanostructures were highly c-axis oriented wurtzite ZnO with strong near band edge emission. The nanostructures were used as templates for the growth of non-polar GaN by metal organic vapor phase epitaxy. XRD, scanning electron microscopy, energy dispersive X-ray microanalysis and CL revealed ZnO encapsulated with GaN, without evidence of ZnO back-etching. XRD showed compressive epitaxial strain in the GaN, which is conducive to stabilization of the higher indium contents required for more efficient green light emitting diode (LED) and photovoltaic (PV) operation. Angular-dependent specular reflection measurements showed a relative reflectance of less than 1% over the wavelength range of 400-720 nm at all angles up to 60°. The superior black-body performance of this moth-eye-like structure would boost LED light extraction and PV anti-reflection performance compared with existing planar or nanowire LED and PV morphologies. The enhancement in core conductivity, provided by the ZnO, would also improve current distribution and increase the effective junction area compared with nanowire devices based solely on GaN.

Original languageEnglish (US)
Pages (from-to)53-58
Number of pages6
JournalPhotonics and Nanostructures - Fundamentals and Applications
Volume15
DOIs
StatePublished - Jun 1 2015

Keywords

  • Anti-reflection
  • InGaN
  • Moth-eye
  • Nanostructures
  • Photovoltaic
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Rogers, D. J., Sandana, V. E., Gautier, S., Moudakir, T., Abid, M., Ougazzaden, A., Teherani, F. H., Bove, P., Molinari, M., Troyon, M., Peres, M., Soares, M. J., Neves, A. J., Monteiro, T., McGrouther, D., Chapman, J. N., Drouhin, H. J., McClintock, R., & Razeghi, M. (2015). Core-shell GaN-ZnO moth-eye nanostructure arrays grown on a-SiO2/Si (1 1 1) as a basis for improved InGaN-based photovoltaics and LEDs. Photonics and Nanostructures - Fundamentals and Applications, 15, 53-58. https://doi.org/10.1016/j.photonics.2015.03.003