Corner overgrowth: Bending a high mobility two-dimensional electron system by 90°

M. Grayson; D. Schuh; M. Huber; M. Bichler; G. Abstreiter

doi:10.1063/1.1851010

Corner overgrowth: Bending a high mobility two-dimensional electron system by 90°

M. Grayson^*, D. Schuh, M. Huber, M. Bichler, G. Abstreiter

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Introducing an epitaxial growth technique called corner overgrowth, we fabricate a quantum confinement structure consisting of a high-mobility GaAsAlGaAs heterojunction overgrown on top of an ex situ cleaved substrate corner. The resulting corner-junction quantum-well heterostructure effectively bends a two-dimensional electron system (2DES) at an atomically sharp 90° angle. The high-mobility 2DES demonstrates fractional quantum Hall effect on both facets. Lossless edge-channel conduction over the corner confirms a continuum of 2D electrons across the junction, consistent with Hartree calculations of the electron distribution. This growth technique differs distinctly from cleaved-edge overgrowth and enables a complementary class of embedded quantum heterostructures.

Original language	English (US)
Article number	032101
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	3
DOIs	https://doi.org/10.1063/1.1851010
State	Published - Jan 17 2005

Funding

This work was supported in part by the DFG Schwerpunktprogramm Quanten-Hall-Systeme (SFB 348). M.G. thanks the A. v. Humboldt Foundation for support, J. Smet and K. von Klitzing for stimulating discussion, and S. F. Roth for SEM pictures.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1851010

Cite this

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title = "Corner overgrowth: Bending a high mobility two-dimensional electron system by 90°",

abstract = "Introducing an epitaxial growth technique called corner overgrowth, we fabricate a quantum confinement structure consisting of a high-mobility GaAsAlGaAs heterojunction overgrown on top of an ex situ cleaved substrate corner. The resulting corner-junction quantum-well heterostructure effectively bends a two-dimensional electron system (2DES) at an atomically sharp 90° angle. The high-mobility 2DES demonstrates fractional quantum Hall effect on both facets. Lossless edge-channel conduction over the corner confirms a continuum of 2D electrons across the junction, consistent with Hartree calculations of the electron distribution. This growth technique differs distinctly from cleaved-edge overgrowth and enables a complementary class of embedded quantum heterostructures.",

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AU - Bichler, M.

AU - Abstreiter, G.

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Y1 - 2005/1/17

N2 - Introducing an epitaxial growth technique called corner overgrowth, we fabricate a quantum confinement structure consisting of a high-mobility GaAsAlGaAs heterojunction overgrown on top of an ex situ cleaved substrate corner. The resulting corner-junction quantum-well heterostructure effectively bends a two-dimensional electron system (2DES) at an atomically sharp 90° angle. The high-mobility 2DES demonstrates fractional quantum Hall effect on both facets. Lossless edge-channel conduction over the corner confirms a continuum of 2D electrons across the junction, consistent with Hartree calculations of the electron distribution. This growth technique differs distinctly from cleaved-edge overgrowth and enables a complementary class of embedded quantum heterostructures.

AB - Introducing an epitaxial growth technique called corner overgrowth, we fabricate a quantum confinement structure consisting of a high-mobility GaAsAlGaAs heterojunction overgrown on top of an ex situ cleaved substrate corner. The resulting corner-junction quantum-well heterostructure effectively bends a two-dimensional electron system (2DES) at an atomically sharp 90° angle. The high-mobility 2DES demonstrates fractional quantum Hall effect on both facets. Lossless edge-channel conduction over the corner confirms a continuum of 2D electrons across the junction, consistent with Hartree calculations of the electron distribution. This growth technique differs distinctly from cleaved-edge overgrowth and enables a complementary class of embedded quantum heterostructures.

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Corner overgrowth: Bending a high mobility two-dimensional electron system by 90°

Abstract

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ASJC Scopus subject areas

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