Corner overgrowth: Bending a high mobility two-dimensional electron system by 90°

M. Grayson*, D. Schuh, M. Huber, M. Bichler, G. Abstreiter

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Introducing an epitaxial growth technique called corner overgrowth, we fabricate a quantum confinement structure consisting of a high-mobility GaAsAlGaAs heterojunction overgrown on top of an ex situ cleaved substrate corner. The resulting corner-junction quantum-well heterostructure effectively bends a two-dimensional electron system (2DES) at an atomically sharp 90° angle. The high-mobility 2DES demonstrates fractional quantum Hall effect on both facets. Lossless edge-channel conduction over the corner confirms a continuum of 2D electrons across the junction, consistent with Hartree calculations of the electron distribution. This growth technique differs distinctly from cleaved-edge overgrowth and enables a complementary class of embedded quantum heterostructures.

Original languageEnglish (US)
Article number032101
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number3
DOIs
StatePublished - Jan 17 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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