Corrections to “Above-Threshold Leakage in Semiconductor Lasers: An Analytical Physical Model”

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English (US)
Pages (from-to)	1098
Number of pages	1
Journal	IEEE Journal of Quantum Electronics
Volume	36
Issue number	9
DOIs	https://doi.org/10.1109/JQE.2000.863963
State	Published - 2000

ASJC Scopus subject areas

@article{3070e6a5cc5544018f81fa3bca214f02,

title = "Corrections to “Above-Threshold Leakage in Semiconductor Lasers: An Analytical Physical Model”",

author = "Aarts, {Igor M.P.} and Sargent, {Edward H.}",

year = "2000",

doi = "10.1109/JQE.2000.863963",

language = "English (US)",

volume = "36",

pages = "1098",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Corrections to “Above-Threshold Leakage in Semiconductor Lasers

T2 - An Analytical Physical Model”

AU - Aarts, Igor M.P.

AU - Sargent, Edward H.

PY - 2000

Y1 - 2000

UR - http://www.scopus.com/inward/record.url?scp=85008023520&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85008023520&partnerID=8YFLogxK

U2 - 10.1109/JQE.2000.863963

DO - 10.1109/JQE.2000.863963

M3 - Comment/debate

AN - SCOPUS:85008023520

SN - 0018-9197

VL - 36

SP - 1098

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 9

ER -