Correlated Chemical and Electrically Active Dopant Analysis in Catalyst-Free Si-Doped InAs Nanowires

Jonathan Becker, Megan O. Hill, Max Sonner, Julian Treu, Markus Döblinger, Alexander Hirler, Hubert Riedl, Jonathan J. Finley, Lincoln Lauhon*, Gregor Koblmüller

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Direct correlations between dopant incorporation, distribution, and their electrical activity in semiconductor nanowires (NW) are difficult to access and require a combination of advanced nanometrology methods. Here, we present a comprehensive investigation of the chemical and electrically active dopant concentrations in n-type Si-doped InAs NW grown by catalyst-free molecular beam epitaxy using various complementary techniques. N-type carrier concentrations are determined by Seebeck effect measurements and four-terminal NW field-effect transistor characterization and compared with the Si dopant distribution analyzed by local electrode atom probe tomography. With increased dopant supply, a distinct saturation of the free carrier concentration is observed in the mid-1018 cm-3 range. This behavior coincides with the incorporated Si dopant concentrations in the bulk part of the NW, suggesting the absence of compensation effects. Importantly, excess Si dopants with very high concentrations (>1020 cm-3) segregate at the NW sidewall surfaces, which confirms recent first-principles calculations and results in modifications of the surface electronic properties that are sensitively probed by field-effect measurements. These findings are expected to be relevant also for doping studies of other noncatalytic III-V NW systems.

Original languageEnglish (US)
Pages (from-to)1603-1610
Number of pages8
JournalACS nano
Issue number2
StatePublished - Feb 27 2018


  • III-V nanowires
  • Seebeck effect
  • atom probe tomography
  • catalyst-free growth
  • doping
  • electrical transport

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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