Correlated high-resolution x-ray diffraction, photoluminescence, and atom probe tomography analysis of continuous and discontinuous InxGa1-xN quantum wells

Xiaochen Ren, James R. Riley, Daniel D. Koleske, Lincoln J. Lauhon*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Atom probe tomography (APT) is used to characterize the influence of hydrogen dosing during GaN barrier growth on the indium distribution of InxGa1-xN quantum wells, and correlated micro-photoluminescence is used to measure changes in the emission spectrum and efficiency. Relative to the control growth, hydrogen dosing leads to a 50% increase in emission intensity arising from discontinuous quantum wells that are narrower, of lower indium content, and with more abrupt interfaces. Simulations of carrier distributions based on APT composition profiles indicate that the greater carrier confinement leads to an increased radiative recombination rate. Furthermore, APT analysis of quantum well profiles enables refinement of x-ray diffraction analysis for more accurate nondestructive measurements of composition.

Original languageEnglish (US)
Article number022107
JournalApplied Physics Letters
Volume107
Issue number2
DOIs
StatePublished - Jul 13 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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