Correlating structural and resistive changes in Ti:NiO resistive memory elements

O. Heinonen*, M. Siegert, A. Roelofs, A. K. Petford-Long, M. Holt, K. D'Aquila, W. Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Structural and resistive changes in Ti-doped NiO resistive random access memory structures that occur upon electroforming have been investigated using hard x-ray microscopy. Electroforming leads to structural changes in regions of size up to about one micrometer, much larger than the grain size of the structure. Such changes are consistent with a migration of ionic species or defects during electroforming over regions containing many crystalline grains.

Original languageEnglish (US)
Article number103103
JournalApplied Physics Letters
Volume96
Issue number10
DOIs
StatePublished - 2010

Funding

The authors wish to thank Nurul Amin, Bryan Oliver, Venu Vaithyanathan, Abdurahman Abdurahman, Ming Sun, Alex Lahave, and Augusto Morrone. Part of this work was carried out at UChicago Argonne, LLC, operator of Argonne National Laboratory (“Argonne”). Argonne, a U.S. Department of Energy Office of Science Laboratory, is operated under Contract No. DE-AC02-06CH11357. Use of the Center for Nanoscale Materials was supported by the U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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