Correlating structural and resistive changes in Ti:NiO resistive memory elements

O. Heinonen*, M. Siegert, A. Roelofs, A. K. Petford-Long, M. Holt, K. D'Aquila, W. Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Structural and resistive changes in Ti-doped NiO resistive random access memory structures that occur upon electroforming have been investigated using hard x-ray microscopy. Electroforming leads to structural changes in regions of size up to about one micrometer, much larger than the grain size of the structure. Such changes are consistent with a migration of ionic species or defects during electroforming over regions containing many crystalline grains.

Original languageEnglish (US)
Article number103103
JournalApplied Physics Letters
Volume96
Issue number10
DOIs
StatePublished - 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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