Correlation between domain structure and magnetoresistance in an active spin-valve element

X. Portier, E. Yu Tsymbal, A. K. Petford-Long, T. C. Anthony, J. A. Brug

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

In situ experiments in a Lorentz transmission-electron microscope have been performed on spin-valve elements through which a current is being applied. The ability to simultaneously measure the resistance and observe the domain structure of the element has allowed us to correlate magnetoresistance with the angle between the magnetization directions in the ferromagnetic layers. The angles have been obtained from summed image differential-phase-contrast images of the domains. A model is proposed to calculate the resulting magnetoresistance. The calculated data are in good agreement with the experimental magnetoresistance measured during observation of the magnetization reversal mechanism.

Original languageEnglish (US)
Pages (from-to)R591-R594
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume58
Issue number2
DOIs
StatePublished - Jan 1 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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