Correlation of dislocations and Te inclusions in detector-grade CdZnTe crystals grown by MVB method

Yadong Xu*, Yihui He, Lingyan Xu, Tao Wang, Gangqiang Zha, Wanqi Jie

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To evaluate the Te inclusions and induced dislocations, batches of as-grown detector-grade CZT wafers with direction of {111} were selected and observed using IR transmission microscope. Size and concentration of Te inclusions were calculated within the crystals. Simultaneously, the dislocation densities were obtained using field emission scanning electron microscope after surface-etching on CZT {111}B surfaces. Morphology of Te inclusion and the induced dislocations configuration were also revealed by cathodeluminescence microscope. The correlation between dislocations density and Te inclusions positioned in CZT crystals was reported. In addition, the dislocations enrichment depends on the size of Te inclusions was discussed by analyzing the dislocations distribution surrounding Te inclusions.

Original languageEnglish (US)
Title of host publicationHard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
DOIs
StatePublished - Dec 1 2012
EventHard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV - San Diego, CA, United States
Duration: Aug 13 2012Aug 15 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8507
ISSN (Print)0277-786X

Other

OtherHard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
Country/TerritoryUnited States
CitySan Diego, CA
Period8/13/128/15/12

Keywords

  • CdZnTe
  • Dislocations
  • Etching pits density (EPD)
  • Te inclusion

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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