Correlation of magnetoresistance with deposition parameters and annealing in CoFe/Cu multilayers

Yong Qing Ma*, Alfred Cerezo, Alexander Georgalakis, Amanda K. Petford-Long, Steve P. Bozeman, Heather Bown, Peter H. Clifton, David J. Larson

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

The correlation of magnetoresistance with deposition parameters and annealing in CoFe/Cu multilayers was studied. The lower pinhole density and lower interfacial roughness in the Cu layers lead to higher magnetoresistance than for the 12 mTorr deposition. After annealing, the magnetoresistance was found to decrease for deposition pressures.

Original languageEnglish (US)
Pages (from-to)GS05
JournalDigests of the Intermag Conference
StatePublished - Dec 1 2002
Event2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands
Duration: Apr 28 2002May 2 2002

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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