Abstract
The correlation of magnetoresistance with deposition parameters and annealing in CoFe/Cu multilayers was studied. The lower pinhole density and lower interfacial roughness in the Cu layers lead to higher magnetoresistance than for the 12 mTorr deposition. After annealing, the magnetoresistance was found to decrease for deposition pressures.
Original language | English (US) |
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Pages (from-to) | GS05 |
Journal | Digests of the Intermag Conference |
State | Published - Dec 1 2002 |
Event | 2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands Duration: Apr 28 2002 → May 2 2002 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering