Corrugated Heterojunction Metal-Oxide Thin-Film Transistors with High Electron Mobility via Vertical Interface Manipulation

Minuk Lee; Jeong Wan Jo; Yoon Jeong Kim; Seungbeom Choi; Sung Min Kwon; Seong Pil Jeon; Antonio Facchetti; Yong Hoon Kim; Sung Kyu Park

doi:10.1002/adma.201804120

Corrugated Heterojunction Metal-Oxide Thin-Film Transistors with High Electron Mobility via Vertical Interface Manipulation

Minuk Lee, Jeong Wan Jo, Yoon Jeong Kim, Seungbeom Choi, Sung Min Kwon, Seong Pil Jeon, Antonio Facchetti^*, Yong Hoon Kim, Sung Kyu Park

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

A new strategy is reported to achieve high-mobility, low-off-current, and operationally stable solution-processable metal-oxide thin-film transistors (TFTs) using a corrugated heterojunction channel structure. The corrugated heterojunction channel, having alternating thin-indium-tin-zinc-oxide (ITZO)/indium-gallium-zinc-oxide (IGZO) and thick-ITZO/IGZO film regions, enables the accumulated electron concentration to be tuned in the TFT off- and on-states via charge modulation at the vertical regions of the heterojunction. The ITZO/IGZO TFTs with optimized corrugated structure exhibit a maximum field-effect mobility >50 cm² V⁻¹ s⁻¹ with an on/off current ratio of >10⁸ and good operational stability (threshold voltage shift <1 V for a positive-gate-bias stress of 10 ks, without passivation). To exploit the underlying conduction mechanism of the corrugated heterojunction TFTs, a physical model is implemented by using a variety of chemical, structural, and electrical characterization tools and Technology Computer-Aided Design simulations. The physical model reveals that efficient charge manipulation is possible via the corrugated structure, by inducing an extremely high carrier concentration at the nanoscale vertical channel regions, enabling low off-currents and high on-currents depending on the applied gate bias.

Original language	English (US)
Article number	1804120
Journal	Advanced Materials
Volume	30
Issue number	40
DOIs	https://doi.org/10.1002/adma.201804120
State	Published - Oct 4 2018

Funding

M.L., J.-W.J., and Y.-J.K. contributed equally to this work. This research was partially supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. NRF-2016R1A2A2A05005110), by the Engineering Research Center of Excellence (ERC) Program supported by NRF, Korean Ministry of Science & Information and Communication Technology (ICT) (Grant No. NRF-2017R1A5A1014708), and by Institute for Information and communications Technology Promotion (IITP) grant funded by MSIP (No. 2017-0-00048, Development of Core Technologies for Tactile Input/Output Panels in Skintronics (Skin Electronics)). Following a period of embargo, the data from this paper can be obtained from the University of Southampton ePrints research repository: http://doi.org/10.5258/SOTON/D0613. Note: The Acknowledgements section was updated on October 1, 2018, after initial publication online. M.L., J.-W.J., and Y.-J.K. contributed equally to this work. This research was partially supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. NRF-2016R1A2A2A05005110), by the Engineering Research Center of Excellence (ERC) Program supported by NRF, Korean Ministry of Science & Information and Communication Technology (ICT) (Grant No. NRF-2017R1A5A1014708), and by Institute for Information and communications Technology Promotion (IITP) grant funded by MSIP (No. 2017-0-00048, Development of Core Technologies for Tactile Input/Output Panels in Skintronics (Skin Electronics)). Following a period of embargo, the data from this paper can be obtained from the University of Southampton ePrints research repository: http://doi.org/10.5258/SOTON/D0613.

Keywords

TCAD simulations
corrugated structures
heterointerfaces
metal-oxide thin-film transistors
solution processes

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
General Materials Science

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10.1002/adma.201804120

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abstract = "A new strategy is reported to achieve high-mobility, low-off-current, and operationally stable solution-processable metal-oxide thin-film transistors (TFTs) using a corrugated heterojunction channel structure. The corrugated heterojunction channel, having alternating thin-indium-tin-zinc-oxide (ITZO)/indium-gallium-zinc-oxide (IGZO) and thick-ITZO/IGZO film regions, enables the accumulated electron concentration to be tuned in the TFT off- and on-states via charge modulation at the vertical regions of the heterojunction. The ITZO/IGZO TFTs with optimized corrugated structure exhibit a maximum field-effect mobility >50 cm2 V−1 s−1 with an on/off current ratio of >108 and good operational stability (threshold voltage shift <1 V for a positive-gate-bias stress of 10 ks, without passivation). To exploit the underlying conduction mechanism of the corrugated heterojunction TFTs, a physical model is implemented by using a variety of chemical, structural, and electrical characterization tools and Technology Computer-Aided Design simulations. The physical model reveals that efficient charge manipulation is possible via the corrugated structure, by inducing an extremely high carrier concentration at the nanoscale vertical channel regions, enabling low off-currents and high on-currents depending on the applied gate bias.",

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AU - Kwon, Sung Min

AU - Jeon, Seong Pil

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AB - A new strategy is reported to achieve high-mobility, low-off-current, and operationally stable solution-processable metal-oxide thin-film transistors (TFTs) using a corrugated heterojunction channel structure. The corrugated heterojunction channel, having alternating thin-indium-tin-zinc-oxide (ITZO)/indium-gallium-zinc-oxide (IGZO) and thick-ITZO/IGZO film regions, enables the accumulated electron concentration to be tuned in the TFT off- and on-states via charge modulation at the vertical regions of the heterojunction. The ITZO/IGZO TFTs with optimized corrugated structure exhibit a maximum field-effect mobility >50 cm2 V−1 s−1 with an on/off current ratio of >108 and good operational stability (threshold voltage shift <1 V for a positive-gate-bias stress of 10 ks, without passivation). To exploit the underlying conduction mechanism of the corrugated heterojunction TFTs, a physical model is implemented by using a variety of chemical, structural, and electrical characterization tools and Technology Computer-Aided Design simulations. The physical model reveals that efficient charge manipulation is possible via the corrugated structure, by inducing an extremely high carrier concentration at the nanoscale vertical channel regions, enabling low off-currents and high on-currents depending on the applied gate bias.

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Corrugated Heterojunction Metal-Oxide Thin-Film Transistors with High Electron Mobility via Vertical Interface Manipulation

Abstract

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