Co2MnX (X=Si, Ge, Sn) Heusler compounds: An ab-initio study

Silvia Picozzi*, Alessandra Continenza, Arthur J. Freeman

*Corresponding author for this work

Research output: Contribution to journalConference article

Abstract

All-electron full-potential linearized augmented plane wave (FLAPW) calculations were performed for Co2MnX Heusler compounds. The possibility of using Heusler compounds as injectors of spin-aligned carriers to be grown on standard non-magnetic materials was also investigated. The calculated hyperfine fields were also compared with available experimental data, resulting in a general underestimate for the magnetic atoms.

Original languageEnglish (US)
Pages (from-to)FR09
JournalDigests of the Intermag Conference
StatePublished - Dec 1 2002
Event2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands
Duration: Apr 28 2002May 2 2002

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Picozzi, S., Continenza, A., & Freeman, A. J. (2002). Co2MnX (X=Si, Ge, Sn) Heusler compounds: An ab-initio study. Digests of the Intermag Conference, FR09.