Critical thickness for transformation of epitaxially stabilized cubic AlN in superlattices

I. W. Kim; Quan Li; L. D. Marks; S. A. Barnett

doi:10.1063/1.1345831

Critical thickness for transformation of epitaxially stabilized cubic AlN in superlattices

I. W. Kim, Quan Li, L. D. Marks, S. A. Barnett^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

88 Scopus citations

Abstract

The epitaxial stabilization and transformation of cubic AlN layers in AlN/VN and AlN/TiN superlattices, grown by reactive sputtering on MgO (001), is described. In AlN/VN, the critical AlN thickness l^C for transformation from cubic to hexagonal increased from ≈3.0 to >4 nm when the VN superlattice layer thickness was increased from 2.0 to 6.0 nm. The effect of lattice mismatch was observed by comparing AlN/VN (mismatch= 1.46%) and AlN/TiN (mismatch = 3.84%). The l^C values were smaller, 2-2.5 nm, for the larger mismatch AlN/TiN system. The dependence of l^C on the lattice mismatch and stabilizing layer thickness is discussed based on models of epitaxial stabilization.

Original language	English (US)
Pages (from-to)	892-894
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	7
DOIs	https://doi.org/10.1063/1.1345831
State	Published - Feb 12 2001

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Critical thickness for transformation of epitaxially stabilized cubic AlN in superlattices",

abstract = "The epitaxial stabilization and transformation of cubic AlN layers in AlN/VN and AlN/TiN superlattices, grown by reactive sputtering on MgO (001), is described. In AlN/VN, the critical AlN thickness lC for transformation from cubic to hexagonal increased from ≈3.0 to >4 nm when the VN superlattice layer thickness was increased from 2.0 to 6.0 nm. The effect of lattice mismatch was observed by comparing AlN/VN (mismatch= 1.46%) and AlN/TiN (mismatch = 3.84%). The lC values were smaller, 2-2.5 nm, for the larger mismatch AlN/TiN system. The dependence of lC on the lattice mismatch and stabilizing layer thickness is discussed based on models of epitaxial stabilization.",

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AU - Kim, I. W.

AU - Li, Quan

AU - Marks, L. D.

AU - Barnett, S. A.

PY - 2001/2/12

Y1 - 2001/2/12

N2 - The epitaxial stabilization and transformation of cubic AlN layers in AlN/VN and AlN/TiN superlattices, grown by reactive sputtering on MgO (001), is described. In AlN/VN, the critical AlN thickness lC for transformation from cubic to hexagonal increased from ≈3.0 to >4 nm when the VN superlattice layer thickness was increased from 2.0 to 6.0 nm. The effect of lattice mismatch was observed by comparing AlN/VN (mismatch= 1.46%) and AlN/TiN (mismatch = 3.84%). The lC values were smaller, 2-2.5 nm, for the larger mismatch AlN/TiN system. The dependence of lC on the lattice mismatch and stabilizing layer thickness is discussed based on models of epitaxial stabilization.

AB - The epitaxial stabilization and transformation of cubic AlN layers in AlN/VN and AlN/TiN superlattices, grown by reactive sputtering on MgO (001), is described. In AlN/VN, the critical AlN thickness lC for transformation from cubic to hexagonal increased from ≈3.0 to >4 nm when the VN superlattice layer thickness was increased from 2.0 to 6.0 nm. The effect of lattice mismatch was observed by comparing AlN/VN (mismatch= 1.46%) and AlN/TiN (mismatch = 3.84%). The lC values were smaller, 2-2.5 nm, for the larger mismatch AlN/TiN system. The dependence of lC on the lattice mismatch and stabilizing layer thickness is discussed based on models of epitaxial stabilization.

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Critical thickness for transformation of epitaxially stabilized cubic AlN in superlattices

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