Croissance et caracterisation d'heterostructures GaAs/Ga0,49In0,51P elaborees par LP-MOCVD

F. Omnes; M. Defour; P. Maurel; M. Razeghi

Croissance et caracterisation d'heterostructures GaAs/Ga_0,49In_0,51P elaborees par LP-MOCVD

Translated title of the contribution: Growth and characterization of GaAs/Ga_0.49In_0.51P heterostructures grown by the LP-MOCVD technique

F. Omnes^*, M. Defour, P. Maurel, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We report in this paper the growth and characterization of high quality GaAs/Ga_0.49In_0.51P heterostructures grown by LP-MOCVD. We report the growth of multiquantum well structures and superlattices of GaAs/Ga_0.49In_0.51P with excellent structural, electrical and optical properties. The growth of a GaAs epitaxial layer on a silicon substrate with a superlattice GaAs/Ga_0.49In_0.51P buffer layer is described. A full width at half maximum of 20 meV has been observed on the photoluminescence peak of this heterostructure at 77 K. The good structural properties of the layer have been evidenced by a simple X-ray diffraction measurement which separated the two peaks related to the Cu-Kα1 and Cu-Kα2 wavelengths.

Translated title of the contribution	Growth and characterization of GaAs/Ga_0.49In_0.51P heterostructures grown by the LP-MOCVD technique
Original language	French
Pages (from-to)	407-426
Number of pages	20
Journal	Revue technique - Thomson-CSF
Volume	20-21
Issue number	3
State	Published - Sep 1 1989

ASJC Scopus subject areas

Engineering(all)

Cite this

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title = "Croissance et caracterisation d'heterostructures GaAs/Ga0,49In0,51P elaborees par LP-MOCVD",

abstract = "We report in this paper the growth and characterization of high quality GaAs/Ga0.49In0.51P heterostructures grown by LP-MOCVD. We report the growth of multiquantum well structures and superlattices of GaAs/Ga0.49In0.51P with excellent structural, electrical and optical properties. The growth of a GaAs epitaxial layer on a silicon substrate with a superlattice GaAs/Ga0.49In0.51P buffer layer is described. A full width at half maximum of 20 meV has been observed on the photoluminescence peak of this heterostructure at 77 K. The good structural properties of the layer have been evidenced by a simple X-ray diffraction measurement which separated the two peaks related to the Cu-Kα1 and Cu-Kα2 wavelengths.",

author = "F. Omnes and M. Defour and P. Maurel and M. Razeghi",

year = "1989",

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T1 - Croissance et caracterisation d'heterostructures GaAs/Ga0,49In0,51P elaborees par LP-MOCVD

AU - Omnes, F.

AU - Defour, M.

AU - Maurel, P.

AU - Razeghi, M.

PY - 1989/9/1

Y1 - 1989/9/1

N2 - We report in this paper the growth and characterization of high quality GaAs/Ga0.49In0.51P heterostructures grown by LP-MOCVD. We report the growth of multiquantum well structures and superlattices of GaAs/Ga0.49In0.51P with excellent structural, electrical and optical properties. The growth of a GaAs epitaxial layer on a silicon substrate with a superlattice GaAs/Ga0.49In0.51P buffer layer is described. A full width at half maximum of 20 meV has been observed on the photoluminescence peak of this heterostructure at 77 K. The good structural properties of the layer have been evidenced by a simple X-ray diffraction measurement which separated the two peaks related to the Cu-Kα1 and Cu-Kα2 wavelengths.

AB - We report in this paper the growth and characterization of high quality GaAs/Ga0.49In0.51P heterostructures grown by LP-MOCVD. We report the growth of multiquantum well structures and superlattices of GaAs/Ga0.49In0.51P with excellent structural, electrical and optical properties. The growth of a GaAs epitaxial layer on a silicon substrate with a superlattice GaAs/Ga0.49In0.51P buffer layer is described. A full width at half maximum of 20 meV has been observed on the photoluminescence peak of this heterostructure at 77 K. The good structural properties of the layer have been evidenced by a simple X-ray diffraction measurement which separated the two peaks related to the Cu-Kα1 and Cu-Kα2 wavelengths.

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Croissance et caracterisation d'heterostructures GaAs/Ga_0,49In_0,51P elaborees par LP-MOCVD

Abstract

ASJC Scopus subject areas

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