Cross-Plane Thermal Conductivity Measurements in Self-Assembled Nanodielectric Heterostructures

Oluwaseyi Balogun; Baojie Lu; Binghao Wang; Antonio Facchetti; Tobin Jay Marks

doi:10.1109/NANO.2018.8626384

Cross-Plane Thermal Conductivity Measurements in Self-Assembled Nanodielectric Heterostructures

Oluwaseyi Balogun, Baojie Lu, Binghao Wang, Antonio Facchetti, Tobin Jay Marks

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The following topics are dealt with: nanofabrication; nanowires; elemental semiconductors; nanoparticles; silicon; nanostructured materials; semiconductor growth; graphene; nanosensors; wide band gap semiconductors.

Original language	English (US)
Title of host publication	2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)
Publisher	IEEE
ISBN (Print)	9781538653364
DOIs	https://doi.org/10.1109/NANO.2018.8626384
State	Published - 2019

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Balogun, O., Lu, B., Wang, B., Facchetti, A., & Marks, T. J. (2019). Cross-Plane Thermal Conductivity Measurements in Self-Assembled Nanodielectric Heterostructures. In 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) IEEE. https://doi.org/10.1109/NANO.2018.8626384

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abstract = "The following topics are dealt with: nanofabrication; nanowires; elemental semiconductors; nanoparticles; silicon; nanostructured materials; semiconductor growth; graphene; nanosensors; wide band gap semiconductors.",

author = "Oluwaseyi Balogun and Baojie Lu and Binghao Wang and Antonio Facchetti and Marks, {Tobin Jay}",

year = "2019",

doi = "10.1109/NANO.2018.8626384",

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AU - Marks, Tobin Jay

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N2 - The following topics are dealt with: nanofabrication; nanowires; elemental semiconductors; nanoparticles; silicon; nanostructured materials; semiconductor growth; graphene; nanosensors; wide band gap semiconductors.

AB - The following topics are dealt with: nanofabrication; nanowires; elemental semiconductors; nanoparticles; silicon; nanostructured materials; semiconductor growth; graphene; nanosensors; wide band gap semiconductors.

U2 - 10.1109/NANO.2018.8626384

DO - 10.1109/NANO.2018.8626384

M3 - Conference contribution

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BT - 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)

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Access to Document

10.1109/NANO.2018.8626384