Cross section and critical dimension metrology in dense high aspect ratio patterns with CD-SAXS

Ronald L. Jones; Eric K. Lin; Qinghuan Lin; Steven J. Weigand; Denis T. Keane; John P. Quintana; Wen Li Wu

doi:10.1063/1.2062994

Cross section and critical dimension metrology in dense high aspect ratio patterns with CD-SAXS

Ronald L. Jones, Eric K. Lin, Qinghuan Lin, Steven J. Weigand, Denis T. Keane, John P. Quintana, Wen Li Wu^*

^*Corresponding author for this work

Office for Research

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

The continuing progress of sub-65 nm patterning technologies highlights the critical need for high precision metrologies capable of characterizing dense, high aspect ratio patterns. We present data from small angle x-ray scattering measurements of critical dimension and average pattern cross section of photoresist line/space patterns. The technique is non-destructive and capable of sub-nm precision in characterizing dimensions and sub-degree precision in sidewall angle of patterns with regular periodicity. Moreover, the information enabling linewidth, pitch and sidewall angle determination are decoupled. Efforts to probe line edge roughness are also discussed. The technique is applicable to dense structures of arbitrary composition with dimensions of (10 to 500) nm, including lines, vias and contact holes and buried structures.

Original language	English (US)
Title of host publication	CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005 - International Conference
Pages	403-406
Number of pages	4
DOIs	https://doi.org/10.1063/1.2062994
State	Published - Sep 9 2005
Event	2005 International Conference on Characterization and Metrology for ULSI Technology - Richardson, TX, United States Duration: Mar 15 2005 → Mar 18 2005

Publication series

Name	AIP Conference Proceedings
Volume	788
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	2005 International Conference on Characterization and Metrology for ULSI Technology
Country/Territory	United States
City	Richardson, TX
Period	3/15/05 → 3/18/05

Keywords

Critical dimension
Line grating
Line width
Lithography
Photoresist pattern
Sidewall angle
X-ray scattering

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.2062994

Cite this

Jones, R. L., Lin, E. K., Lin, Q., Weigand, S. J., Keane, D. T., Quintana, J. P., & Wu, W. L. (2005). Cross section and critical dimension metrology in dense high aspect ratio patterns with CD-SAXS. In CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005 - International Conference (pp. 403-406). (AIP Conference Proceedings; Vol. 788). https://doi.org/10.1063/1.2062994

@inproceedings{4df0e462ade04a428a65a9a6c6638e57,

title = "Cross section and critical dimension metrology in dense high aspect ratio patterns with CD-SAXS",

abstract = "The continuing progress of sub-65 nm patterning technologies highlights the critical need for high precision metrologies capable of characterizing dense, high aspect ratio patterns. We present data from small angle x-ray scattering measurements of critical dimension and average pattern cross section of photoresist line/space patterns. The technique is non-destructive and capable of sub-nm precision in characterizing dimensions and sub-degree precision in sidewall angle of patterns with regular periodicity. Moreover, the information enabling linewidth, pitch and sidewall angle determination are decoupled. Efforts to probe line edge roughness are also discussed. The technique is applicable to dense structures of arbitrary composition with dimensions of (10 to 500) nm, including lines, vias and contact holes and buried structures.",

keywords = "Critical dimension, Line grating, Line width, Lithography, Photoresist pattern, Sidewall angle, X-ray scattering",

author = "Jones, {Ronald L.} and Lin, {Eric K.} and Qinghuan Lin and Weigand, {Steven J.} and Keane, {Denis T.} and Quintana, {John P.} and Wu, {Wen Li}",

year = "2005",

month = sep,

day = "9",

doi = "10.1063/1.2062994",

language = "English (US)",

isbn = "0735402779",

series = "AIP Conference Proceedings",

pages = "403--406",

booktitle = "CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005 - International Conference",

note = "2005 International Conference on Characterization and Metrology for ULSI Technology ; Conference date: 15-03-2005 Through 18-03-2005",

}

Jones, RL, Lin, EK, Lin, Q, Weigand, SJ, Keane, DT, Quintana, JP & Wu, WL 2005, Cross section and critical dimension metrology in dense high aspect ratio patterns with CD-SAXS. in CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005 - International Conference. AIP Conference Proceedings, vol. 788, pp. 403-406, 2005 International Conference on Characterization and Metrology for ULSI Technology, Richardson, TX, United States, 3/15/05. https://doi.org/10.1063/1.2062994

Cross section and critical dimension metrology in dense high aspect ratio patterns with CD-SAXS. / Jones, Ronald L.; Lin, Eric K.; Lin, Qinghuan et al.
CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005 - International Conference. 2005. p. 403-406 (AIP Conference Proceedings; Vol. 788).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Cross section and critical dimension metrology in dense high aspect ratio patterns with CD-SAXS

AU - Jones, Ronald L.

AU - Lin, Eric K.

AU - Lin, Qinghuan

AU - Weigand, Steven J.

AU - Keane, Denis T.

AU - Quintana, John P.

AU - Wu, Wen Li

PY - 2005/9/9

Y1 - 2005/9/9

N2 - The continuing progress of sub-65 nm patterning technologies highlights the critical need for high precision metrologies capable of characterizing dense, high aspect ratio patterns. We present data from small angle x-ray scattering measurements of critical dimension and average pattern cross section of photoresist line/space patterns. The technique is non-destructive and capable of sub-nm precision in characterizing dimensions and sub-degree precision in sidewall angle of patterns with regular periodicity. Moreover, the information enabling linewidth, pitch and sidewall angle determination are decoupled. Efforts to probe line edge roughness are also discussed. The technique is applicable to dense structures of arbitrary composition with dimensions of (10 to 500) nm, including lines, vias and contact holes and buried structures.

AB - The continuing progress of sub-65 nm patterning technologies highlights the critical need for high precision metrologies capable of characterizing dense, high aspect ratio patterns. We present data from small angle x-ray scattering measurements of critical dimension and average pattern cross section of photoresist line/space patterns. The technique is non-destructive and capable of sub-nm precision in characterizing dimensions and sub-degree precision in sidewall angle of patterns with regular periodicity. Moreover, the information enabling linewidth, pitch and sidewall angle determination are decoupled. Efforts to probe line edge roughness are also discussed. The technique is applicable to dense structures of arbitrary composition with dimensions of (10 to 500) nm, including lines, vias and contact holes and buried structures.

KW - Critical dimension

KW - Line grating

KW - Line width

KW - Lithography

KW - Photoresist pattern

KW - Sidewall angle

KW - X-ray scattering

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T3 - AIP Conference Proceedings

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BT - CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005 - International Conference

T2 - 2005 International Conference on Characterization and Metrology for ULSI Technology

Y2 - 15 March 2005 through 18 March 2005

ER -

Cross section and critical dimension metrology in dense high aspect ratio patterns with CD-SAXS

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Keywords

ASJC Scopus subject areas

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