Cross section and critical dimension metrology in dense high aspect ratio patterns with CD-SAXS

Ronald L. Jones, Eric K. Lin, Qinghuan Lin, Steven J. Weigand, Denis T. Keane, John P. Quintana, Wen Li Wu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The continuing progress of sub-65 nm patterning technologies highlights the critical need for high precision metrologies capable of characterizing dense, high aspect ratio patterns. We present data from small angle x-ray scattering measurements of critical dimension and average pattern cross section of photoresist line/space patterns. The technique is non-destructive and capable of sub-nm precision in characterizing dimensions and sub-degree precision in sidewall angle of patterns with regular periodicity. Moreover, the information enabling linewidth, pitch and sidewall angle determination are decoupled. Efforts to probe line edge roughness are also discussed. The technique is applicable to dense structures of arbitrary composition with dimensions of (10 to 500) nm, including lines, vias and contact holes and buried structures.

Original languageEnglish (US)
Title of host publicationCHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005 - International Conference
Pages403-406
Number of pages4
DOIs
StatePublished - Sep 9 2005
Event2005 International Conference on Characterization and Metrology for ULSI Technology - Richardson, TX, United States
Duration: Mar 15 2005Mar 18 2005

Publication series

NameAIP Conference Proceedings
Volume788
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other2005 International Conference on Characterization and Metrology for ULSI Technology
CountryUnited States
CityRichardson, TX
Period3/15/053/18/05

Keywords

  • Critical dimension
  • Line grating
  • Line width
  • Lithography
  • Photoresist pattern
  • Sidewall angle
  • X-ray scattering

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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