Crystal growth of ternary and quaternary alkali metal bismuth chalcogenides using Bridgman technique

T. Kyratsi; D. Y. Chung; K. S. Choi; J. S. Dick; W. Chen; C. Uher; M. Kanatzidis

Crystal growth of ternary and quaternary alkali metal bismuth chalcogenides using Bridgman technique

T. Kyratsi^*, D. Y. Chung, K. S. Choi, J. S. Dick, W. Chen, C. Uher, M. Kanatzidis

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Conference article › peer-review

Abstract

Our exploratory research in new thermoelectric materials has identified the ternary and quaternary bismuth chalcogenides β-K₂Bi₈Se₁₃, K_2.5Bi_8.5Se₁₄ and K_1+xPb_4-2xBi_7+xSe₁₅, to have promising properties for thermoelectric applications. These materials have needlelike morphology so they are highly anisotropic in their electrical and thermal properties. In order to achieve long and well-oriented needles for which, consequently, the best thermoelectric performance is expected, we developed a modified Bridgman technique for their bulk crystal growth. The preliminary results of our crystal growth experiments as well as electrical conductivity, Seebeck coefficient and thermal conductivity for the compounds obtained from this technique are presented.

Original language	English (US)
Pages (from-to)	Z881-Z886
Journal	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	4
State	Published - 2001
Event	IEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia Duration: May 6 2001 → May 9 2001

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Crystal growth of ternary and quaternary alkali metal bismuth chalcogenides using Bridgman technique",

abstract = "Our exploratory research in new thermoelectric materials has identified the ternary and quaternary bismuth chalcogenides β-K2Bi8Se13, K2.5Bi8.5Se14 and K1+xPb4-2xBi7+xSe15, to have promising properties for thermoelectric applications. These materials have needlelike morphology so they are highly anisotropic in their electrical and thermal properties. In order to achieve long and well-oriented needles for which, consequently, the best thermoelectric performance is expected, we developed a modified Bridgman technique for their bulk crystal growth. The preliminary results of our crystal growth experiments as well as electrical conductivity, Seebeck coefficient and thermal conductivity for the compounds obtained from this technique are presented.",

author = "T. Kyratsi and Chung, {D. Y.} and Choi, {K. S.} and Dick, {J. S.} and W. Chen and C. Uher and M. Kanatzidis",

note = "Copyright: Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.; IEEE International Symposium on Circuits and Systems (ISCAS 2001) ; Conference date: 06-05-2001 Through 09-05-2001",

year = "2001",

language = "English (US)",

volume = "4",

pages = "Z881--Z886",

journal = "Proceedings - IEEE International Symposium on Circuits and Systems",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Crystal growth of ternary and quaternary alkali metal bismuth chalcogenides using Bridgman technique

AU - Kyratsi, T.

AU - Chung, D. Y.

AU - Choi, K. S.

AU - Dick, J. S.

AU - Chen, W.

AU - Uher, C.

AU - Kanatzidis, M.

PY - 2001

Y1 - 2001

N2 - Our exploratory research in new thermoelectric materials has identified the ternary and quaternary bismuth chalcogenides β-K2Bi8Se13, K2.5Bi8.5Se14 and K1+xPb4-2xBi7+xSe15, to have promising properties for thermoelectric applications. These materials have needlelike morphology so they are highly anisotropic in their electrical and thermal properties. In order to achieve long and well-oriented needles for which, consequently, the best thermoelectric performance is expected, we developed a modified Bridgman technique for their bulk crystal growth. The preliminary results of our crystal growth experiments as well as electrical conductivity, Seebeck coefficient and thermal conductivity for the compounds obtained from this technique are presented.

AB - Our exploratory research in new thermoelectric materials has identified the ternary and quaternary bismuth chalcogenides β-K2Bi8Se13, K2.5Bi8.5Se14 and K1+xPb4-2xBi7+xSe15, to have promising properties for thermoelectric applications. These materials have needlelike morphology so they are highly anisotropic in their electrical and thermal properties. In order to achieve long and well-oriented needles for which, consequently, the best thermoelectric performance is expected, we developed a modified Bridgman technique for their bulk crystal growth. The preliminary results of our crystal growth experiments as well as electrical conductivity, Seebeck coefficient and thermal conductivity for the compounds obtained from this technique are presented.

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M3 - Conference article

AN - SCOPUS:0034998832

SN - 0271-4310

VL - 4

SP - Z881-Z886

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

T2 - IEEE International Symposium on Circuits and Systems (ISCAS 2001)

Y2 - 6 May 2001 through 9 May 2001

ER -

Crystal growth of ternary and quaternary alkali metal bismuth chalcogenides using Bridgman technique

Abstract

ASJC Scopus subject areas

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