Crystal growth of the perovskite semiconductor CsPbBr3: A new material for high-energy radiation detection

Constantinos C. Stoumpos; Christos D. Malliakas; John A. Peters; Zhifu Liu; Maria Sebastian; Jino Im; Thomas C. Chasapis; Arief C. Wibowo; Duck Young Chung; Arthur J. Freeman; Bruce W. Wessels; Mercouri G. Kanatzidis

doi:10.1021/cg400645t

Crystal growth of the perovskite semiconductor CsPbBr₃: A new material for high-energy radiation detection

Constantinos C. Stoumpos, Christos D. Malliakas, John A. Peters, Zhifu Liu, Maria Sebastian, Jino Im, Thomas C. Chasapis, Arief C. Wibowo, Duck Young Chung, Arthur J. Freeman, Bruce W. Wessels, Mercouri G. Kanatzidis^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1001 Scopus citations

Abstract

The synthesis, crystal growth, and structural and optoelectronic characterization has been carried out for the perovskite compound CsPbBr ₃. This compound is a direct band gap semiconductor which meets most of the requirements for successful detection of X- and γ-ray radiation, such as high attenuation, high resistivity, and significant photoconductivity response, with detector resolution comparable to that of commercial, state-of-the-art materials. A structural phase transition which occurs during crystal growth at higher temperature does not seem to affect its crystal quality. Its μτ product for both hole and electron carriers is approximately equal. The μτ product for electrons is comparable to cadmium zinc telluride (CZT) and that for holes is 10 times higher than CZT.

Original language	English (US)
Pages (from-to)	2722-2727
Number of pages	6
Journal	Crystal Growth and Design
Volume	13
Issue number	7
DOIs	https://doi.org/10.1021/cg400645t
State	Published - Jul 3 2013

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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Stoumpos, C. C., Malliakas, C. D., Peters, J. A., Liu, Z., Sebastian, M., Im, J., Chasapis, T. C., Wibowo, A. C., Chung, D. Y., Freeman, A. J., Wessels, B. W., & Kanatzidis, M. G. (2013). Crystal growth of the perovskite semiconductor CsPbBr₃: A new material for high-energy radiation detection. Crystal Growth and Design, 13(7), 2722-2727. https://doi.org/10.1021/cg400645t

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title = "Crystal growth of the perovskite semiconductor CsPbBr3: A new material for high-energy radiation detection",

abstract = "The synthesis, crystal growth, and structural and optoelectronic characterization has been carried out for the perovskite compound CsPbBr 3. This compound is a direct band gap semiconductor which meets most of the requirements for successful detection of X- and γ-ray radiation, such as high attenuation, high resistivity, and significant photoconductivity response, with detector resolution comparable to that of commercial, state-of-the-art materials. A structural phase transition which occurs during crystal growth at higher temperature does not seem to affect its crystal quality. Its μτ product for both hole and electron carriers is approximately equal. The μτ product for electrons is comparable to cadmium zinc telluride (CZT) and that for holes is 10 times higher than CZT.",

author = "Stoumpos, {Constantinos C.} and Malliakas, {Christos D.} and Peters, {John A.} and Zhifu Liu and Maria Sebastian and Jino Im and Chasapis, {Thomas C.} and Wibowo, {Arief C.} and Chung, {Duck Young} and Freeman, {Arthur J.} and Wessels, {Bruce W.} and Kanatzidis, {Mercouri G.}",

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doi = "10.1021/cg400645t",

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T1 - Crystal growth of the perovskite semiconductor CsPbBr3

T2 - A new material for high-energy radiation detection

AU - Stoumpos, Constantinos C.

AU - Malliakas, Christos D.

AU - Peters, John A.

AU - Liu, Zhifu

AU - Sebastian, Maria

AU - Im, Jino

AU - Chasapis, Thomas C.

AU - Wibowo, Arief C.

AU - Chung, Duck Young

AU - Freeman, Arthur J.

AU - Wessels, Bruce W.

AU - Kanatzidis, Mercouri G.

PY - 2013/7/3

Y1 - 2013/7/3

N2 - The synthesis, crystal growth, and structural and optoelectronic characterization has been carried out for the perovskite compound CsPbBr 3. This compound is a direct band gap semiconductor which meets most of the requirements for successful detection of X- and γ-ray radiation, such as high attenuation, high resistivity, and significant photoconductivity response, with detector resolution comparable to that of commercial, state-of-the-art materials. A structural phase transition which occurs during crystal growth at higher temperature does not seem to affect its crystal quality. Its μτ product for both hole and electron carriers is approximately equal. The μτ product for electrons is comparable to cadmium zinc telluride (CZT) and that for holes is 10 times higher than CZT.

AB - The synthesis, crystal growth, and structural and optoelectronic characterization has been carried out for the perovskite compound CsPbBr 3. This compound is a direct band gap semiconductor which meets most of the requirements for successful detection of X- and γ-ray radiation, such as high attenuation, high resistivity, and significant photoconductivity response, with detector resolution comparable to that of commercial, state-of-the-art materials. A structural phase transition which occurs during crystal growth at higher temperature does not seem to affect its crystal quality. Its μτ product for both hole and electron carriers is approximately equal. The μτ product for electrons is comparable to cadmium zinc telluride (CZT) and that for holes is 10 times higher than CZT.

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Crystal growth of the perovskite semiconductor CsPbBr₃: A new material for high-energy radiation detection

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