David N Seidman*, R. S. Averback, P. R. Okamoto, A. C. Baily

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations


The amorphous (a)-to-crystalline (c) phase transition has been studied in electron (e** minus ) and/or ion irradiated silicon (Si). The irradiations were performed in situ in the Argonne High Voltage Microscope-Tandem Facility. The irradiation of Si, at less than 10 K, with 1-MeV e** minus to a fluence of 14 dpa failed to induce the c-to-a transition. Whereas an irradiation, at less than 10 K, with 1. 0 or 1. 5-MeV Kr** plus ions induced the c-to-a transition by a fluence of approximately equals 0. 37 dpa. Alternatively a dual irradiation, at 10 K, with 1. 0-MeV e** minus and 1. 0 or 1. 5-MeV Kr** plus to a Kr** plus influence of 1. 5 dpa - where the ratio of the displacement rates for e** minus to ions was approximately equals 0. 5 - resulted in the Si specimen retaining a degree of crystallinity. These results are discussed in terms of the degree of dispersion of point defects in the primary state of radiation damage and the mobilities of point defects.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Number of pages7
ISBN (Print)0931837162
StatePublished - Dec 1 1986

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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