Crystallization of thin Bi/Ge films: Role of Bi crystal size

A. K. Petford-Long*, N. Wilson, R. C. Doole, R. Serna, C. N. Afonso

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

The kinetics of metal-induced-crystallization of layered films containing amorphous Ge (a-Ge) in contact with Bi nanocrystals (NCs) have been studied by in situ transmission electron microscope annealing. The a-Ge crystallization temperature depends strongly on NC size and shape, the former influencing the nucleation process through the metal surface area in contact with the semiconductor and the latter controlling the initial Ge crystal growth direction.

Original languageEnglish (US)
Pages (from-to)749-751
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume198
DOIs
StatePublished - Jun 1 1999
EventProceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98) - Vancouver, BC, Can
Duration: Jun 14 1998Jun 19 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Crystallization of thin Bi/Ge films: Role of Bi crystal size'. Together they form a unique fingerprint.

Cite this