TY - JOUR
T1 - Crystallization of thin Bi/Ge films
T2 - Proceedings of the 1998 3rd International Symposium on Metallic Multilayers (MML-98)
AU - Petford-Long, A. K.
AU - Wilson, N.
AU - Doole, R. C.
AU - Serna, R.
AU - Afonso, C. N.
N1 - Funding Information:
The authors thank the Royal Society (AKPL), the Suffolk LEA (NW), and CICYT (TIC96-0467) for partial financial support.
PY - 1999/6/1
Y1 - 1999/6/1
N2 - The kinetics of metal-induced-crystallization of layered films containing amorphous Ge (a-Ge) in contact with Bi nanocrystals (NCs) have been studied by in situ transmission electron microscope annealing. The a-Ge crystallization temperature depends strongly on NC size and shape, the former influencing the nucleation process through the metal surface area in contact with the semiconductor and the latter controlling the initial Ge crystal growth direction.
AB - The kinetics of metal-induced-crystallization of layered films containing amorphous Ge (a-Ge) in contact with Bi nanocrystals (NCs) have been studied by in situ transmission electron microscope annealing. The a-Ge crystallization temperature depends strongly on NC size and shape, the former influencing the nucleation process through the metal surface area in contact with the semiconductor and the latter controlling the initial Ge crystal growth direction.
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U2 - 10.1016/S0304-8853(98)01035-X
DO - 10.1016/S0304-8853(98)01035-X
M3 - Conference article
AN - SCOPUS:0032688566
SN - 0304-8853
VL - 198
SP - 749
EP - 751
JO - Journal of Magnetism and Magnetic Materials
JF - Journal of Magnetism and Magnetic Materials
Y2 - 14 June 1998 through 19 June 1998
ER -