Crystallographic growth models of wurtzite-type thin films on 6H-SIC

H. Ohsato, K. Wada, T. Kato, C. J. Sun, M. Razeghi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Epitaxial growth of GaN has been tried using various kinds of substrates so far. Of all the substrate. Al2O3 has been widely used for the GaN growth. Besides Al2O3. SiC is also expected as one of the most suitable substrates for the GaN growth, since SiC has a small mismatch in the lattice parameters with GaN and has good thermal stability under controlled atmospheres during the GaN growth. Both 611-SiC and GaN having wurtzite structure belong to the same space group (P63mc). The lattice parameters are as follows: a=3.08. c=15.08Å for 6H-SiC and a-3.19, C=5.18Å for GaN. SiC has two opposite surface polarities along (001) direction. The main objective of our research was to establish a crystallographic growth model of GaN on the (00·l)6H-SiC with different polarities of Si and C surfaces.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2001
EditorsS. Yoshida, S. Nishino, H. Harima, T. Kimoto
PublisherTrans Tech Publications Ltd
Pages1489-1492
Number of pages4
ISBN (Print)9780878498949
DOIs
StatePublished - 2002
EventInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001 - Tsukuba, Japan
Duration: Oct 28 2001Nov 2 2001

Publication series

NameMaterials Science Forum
Volume389-393
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

OtherInternational Conference on Silicon Carbide and Related Materials, ICSCRM 2001
CountryJapan
CityTsukuba
Period10/28/0111/2/01

Keywords

  • Crystallographic epitaxial growth model
  • GaN on SiC

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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