In this article, we present a crystallographic model to describe the epitaxial growth of wurtzite-type thin films such as gallium nitride (GaN) on different orientations of sapphire (Al2O3) substrates. Through this model, we demonstrate the thin films grown on (00·1)Al 2O3 have a better epilayer-substrate interface quality than those grown on (01·2)Al2O3. We also show the epilayer grown on (00·1)Al2O3 are gallium-terminated, and both (00·1) and (01·2) surfaces of sapphire crystals are oxygen-terminated.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Applied Physics|
|State||Published - 1994|
ASJC Scopus subject areas
- Physics and Astronomy(all)