Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates

P. Kung; C. J. Sun; A. Saxler; H. Ohsato; M. Razeghi

doi:10.1063/1.355943

Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates

P. Kung^*, C. J. Sun, A. Saxler, H. Ohsato, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

84 Scopus citations

Abstract

In this article, we present a crystallographic model to describe the epitaxial growth of wurtzite-type thin films such as gallium nitride (GaN) on different orientations of sapphire (Al₂O₃) substrates. Through this model, we demonstrate the thin films grown on (00·1)Al ₂O₃ have a better epilayer-substrate interface quality than those grown on (01·2)Al₂O₃. We also show the epilayer grown on (00·1)Al₂O₃ are gallium-terminated, and both (00·1) and (01·2) surfaces of sapphire crystals are oxygen-terminated.

Original language	English (US)
Pages (from-to)	4515-4519
Number of pages	5
Journal	Journal of Applied Physics
Volume	75
Issue number	9
DOIs	https://doi.org/10.1063/1.355943
State	Published - 1994

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "In this article, we present a crystallographic model to describe the epitaxial growth of wurtzite-type thin films such as gallium nitride (GaN) on different orientations of sapphire (Al2O3) substrates. Through this model, we demonstrate the thin films grown on (00·1)Al 2O3 have a better epilayer-substrate interface quality than those grown on (01·2)Al2O3. We also show the epilayer grown on (00·1)Al2O3 are gallium-terminated, and both (00·1) and (01·2) surfaces of sapphire crystals are oxygen-terminated.",

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AU - Kung, P.

AU - Sun, C. J.

AU - Saxler, A.

AU - Ohsato, H.

AU - Razeghi, M.

PY - 1994

Y1 - 1994

N2 - In this article, we present a crystallographic model to describe the epitaxial growth of wurtzite-type thin films such as gallium nitride (GaN) on different orientations of sapphire (Al2O3) substrates. Through this model, we demonstrate the thin films grown on (00·1)Al 2O3 have a better epilayer-substrate interface quality than those grown on (01·2)Al2O3. We also show the epilayer grown on (00·1)Al2O3 are gallium-terminated, and both (00·1) and (01·2) surfaces of sapphire crystals are oxygen-terminated.

AB - In this article, we present a crystallographic model to describe the epitaxial growth of wurtzite-type thin films such as gallium nitride (GaN) on different orientations of sapphire (Al2O3) substrates. Through this model, we demonstrate the thin films grown on (00·1)Al 2O3 have a better epilayer-substrate interface quality than those grown on (01·2)Al2O3. We also show the epilayer grown on (00·1)Al2O3 are gallium-terminated, and both (00·1) and (01·2) surfaces of sapphire crystals are oxygen-terminated.

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Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates

Abstract

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