Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates

P. Kung*, C. J. Sun, A. Saxler, H. Ohsato, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

78 Scopus citations

Abstract

In this article, we present a crystallographic model to describe the epitaxial growth of wurtzite-type thin films such as gallium nitride (GaN) on different orientations of sapphire (Al2O3) substrates. Through this model, we demonstrate the thin films grown on (00·1)Al 2O3 have a better epilayer-substrate interface quality than those grown on (01·2)Al2O3. We also show the epilayer grown on (00·1)Al2O3 are gallium-terminated, and both (00·1) and (01·2) surfaces of sapphire crystals are oxygen-terminated.

Original languageEnglish (US)
Pages (from-to)4515-4519
Number of pages5
JournalJournal of Applied Physics
Volume75
Issue number9
DOIs
StatePublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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