Cubic AgPbmSbTe2+m: Bulk Thermoelectric Materials with High Figure of Merit

Kuei Fang Hsu, Sim Loo, Fu Guo, Wei Chen, Jeffrey S. Dyck, Ctirad Uher, Tim Hogan, E. K. Polychroniadis, Mercouri G. Kanatzidis*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2461 Scopus citations

Abstract

The conversion of heat to electricity by thermoelectric devices may play a key role in the future for energy production and utilization. However, in order to meet that role, more efficient thermoelectric materials are needed that are suitable for high-temperature applications. We show that the material system AgPbmSbTe2+m may be suitable for this purpose. With m = 10 and 18 and doped appropriately, n-type semiconductors can be produced that exhibit a high thermoelectric figure of merit material ZTmax of ∼2.2 at 800 kelvin. In the temperature range 600 to 900 kelvin, the AgPbmSbTe2+m material is expected to outperform all reported bulk thermoelectrics, thereby earmarking it as a material system for potential use in efficient thermoelectric power generation from heat sources.

Original languageEnglish (US)
Pages (from-to)818-821
Number of pages4
JournalScience
Volume303
Issue number5659
DOIs
StatePublished - Feb 6 2004

ASJC Scopus subject areas

  • General

Fingerprint Dive into the research topics of 'Cubic AgPb<sub>m</sub>SbTe<sub>2+m</sub>: Bulk Thermoelectric Materials with High Figure of Merit'. Together they form a unique fingerprint.

Cite this