Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

R. R. Bahabry, A. Gumus, A. T. Kutbee, N. Wehbe, S. M. Ahmed, M. T. Ghoneim, K. T. Lee, J. A. Rogers, M. M. Hussain

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages602-605
Number of pages4
ISBN (Electronic)9781509027248
DOIs
StatePublished - Nov 18 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2016-November
ISSN (Print)0160-8371

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period6/5/166/10/16

Keywords

  • CMOS
  • Contact engineering
  • crystlaine silcon photovoltaic
  • nickel silicide
  • screen printed silver

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact'. Together they form a unique fingerprint.

Cite this