@inproceedings{9fd261d008a24b7a9eece4d0d91412ec,
title = "Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact",
abstract = "We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.",
keywords = "CMOS, Contact engineering, crystlaine silcon photovoltaic, nickel silicide, screen printed silver",
author = "Bahabry, {R. R.} and A. Gumus and Kutbee, {A. T.} and N. Wehbe and Ahmed, {S. M.} and Ghoneim, {M. T.} and Lee, {K. T.} and Rogers, {J. A.} and Hussain, {M. M.}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",
year = "2016",
month = nov,
day = "18",
doi = "10.1109/PVSC.2016.7749668",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "602--605",
booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",
address = "United States",
}
