Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

R. R. Bahabry; A. Gumus; A. T. Kutbee; N. Wehbe; S. M. Ahmed; M. T. Ghoneim; K. T. Lee; J. A. Rogers; M. M. Hussain

doi:10.1109/PVSC.2017.8366069

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

R. R. Bahabry, A. Gumus, A. T. Kutbee, N. Wehbe, S. M. Ahmed, M. T. Ghoneim, K. T. Lee, J. A. Rogers, M. M. Hussain^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm² enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

Original language	English (US)
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3025-3030
Number of pages	6
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366069
State	Published - 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	6/25/17 → 6/30/17

Keywords

CMOS
Contact engineering
Crystlaine silcon photovoltaic
Nickel silicide
Screen printed silver

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC.2017.8366069

Cite this

Bahabry, R. R., Gumus, A., Kutbee, A. T., Wehbe, N., Ahmed, S. M., Ghoneim, M. T., Lee, K. T., Rogers, J. A., & Hussain, M. M. (2017). Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 3025-3030). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366069

@inproceedings{e11c63649b424329957182b7c05cd375,

title = "Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact",

abstract = "We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.",

keywords = "CMOS, Contact engineering, Crystlaine silcon photovoltaic, Nickel silicide, Screen printed silver",

author = "Bahabry, {R. R.} and A. Gumus and Kutbee, {A. T.} and N. Wehbe and Ahmed, {S. M.} and Ghoneim, {M. T.} and Lee, {K. T.} and Rogers, {J. A.} and Hussain, {M. M.}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

doi = "10.1109/PVSC.2017.8366069",

language = "English (US)",

series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "3025--3030",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

address = "United States",

}

Bahabry, RR, Gumus, A, Kutbee, AT, Wehbe, N, Ahmed, SM, Ghoneim, MT, Lee, KT, Rogers, JA & Hussain, MM 2017, Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 3025-3030, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366069

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact. / Bahabry, R. R.; Gumus, A.; Kutbee, A. T. et al.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 3025-3030 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

AU - Bahabry, R. R.

AU - Gumus, A.

AU - Kutbee, A. T.

AU - Wehbe, N.

AU - Ahmed, S. M.

AU - Ghoneim, M. T.

AU - Lee, K. T.

AU - Rogers, J. A.

AU - Hussain, M. M.

PY - 2017

Y1 - 2017

N2 - We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

AB - We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.

KW - CMOS

KW - Contact engineering

KW - Crystlaine silcon photovoltaic

KW - Nickel silicide

KW - Screen printed silver

UR - http://www.scopus.com/inward/record.url?scp=85048469050&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048469050&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2017.8366069

DO - 10.1109/PVSC.2017.8366069

M3 - Conference contribution

AN - SCOPUS:85048469050

T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

SP - 3025

EP - 3030

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

Y2 - 25 June 2017 through 30 June 2017

ER -

Bahabry RR, Gumus A, Kutbee AT, Wehbe N, Ahmed SM, Ghoneim MT et al. Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 3025-3030. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). doi: 10.1109/PVSC.2017.8366069

Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact

Abstract

Publication series

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Keywords

ASJC Scopus subject areas

UN SDGs

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