@inproceedings{e11c63649b424329957182b7c05cd375,
title = "Current enhancement in crystalline silicon photovoltaic by low-cost nickel silicide back contact",
abstract = "We report short circuit current (Jsc) enhancement in crystalline silicon (C-Si) photovoltaic (PV) using low-cost Ohmic contact engineering by integration of Nickel mono-silicide (NiSi) for back contact metallization as an alternative to the status quo of using expensive screen printed silver (Ag). We show 2.6 mA/cm2 enhancement in the short circuit current (Jsc) and 1.2 % increment in the efficiency by improving the current collection due to the low specific contact resistance of the NiSi on the heavily Boron (B) doped Silicon (Si) interface.",
keywords = "CMOS, Contact engineering, Crystlaine silcon photovoltaic, Nickel silicide, Screen printed silver",
author = "Bahabry, {R. R.} and A. Gumus and Kutbee, {A. T.} and N. Wehbe and Ahmed, {S. M.} and Ghoneim, {M. T.} and Lee, {K. T.} and Rogers, {J. A.} and Hussain, {M. M.}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",
year = "2017",
doi = "10.1109/PVSC.2017.8366069",
language = "English (US)",
series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3025--3030",
booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
address = "United States",
}
