By generalizing the classical linear response theory of "stick"percolation to nonlinear regime, we find that the drain-current of a nanobundle thin-film transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LSξ(LS/LC, ρSLS2) × f (VG, VD) where A is a technology-specific constant, ξ is a function of geometrical factors such as stick length LS, channel length LC, and stick density ρS and f is a function of drain VD and gate VG biasing conditions. This scaling formula implies that the measurement of the full current-voltage characteristics of a "single" NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.
- Carbon nanotube (NT)
- Inhomogeneous percolation theory
- Network transistor
- Thin-film transistor (TFT)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering