Current-voltage characteristics of long-channel nanobundle thin-film transistors: A "Bottom-Up" perspective

N. Pimparkar*, Q. Cao, S. Kumar, J. Y. Murthy, J. Rogers

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

58 Scopus citations

Abstract

By generalizing the classical linear response theory of "stick"percolation to nonlinear regime, we find that the drain-current of a nanobundle thin-film transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LSξ(LS/LC, ρSLS2) × f (VG, VD) where A is a technology-specific constant, ξ is a function of geometrical factors such as stick length LS, channel length LC, and stick density ρS and f is a function of drain VD and gate VG biasing conditions. This scaling formula implies that the measurement of the full current-voltage characteristics of a "single" NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.

Original languageEnglish (US)
Pages (from-to)157-160
Number of pages4
JournalIEEE Electron Device Letters
Volume28
Issue number2
DOIs
StatePublished - Feb 2007

Funding

Manuscript received August 20, 2006. This work was supported by the Network of Computational Nanotechnology and the Lilly Foundation. The review of this letter was arranged by Editor E. Samgiorgi.

Keywords

  • Carbon nanotube (NT)
  • Inhomogeneous percolation theory
  • Network transistor
  • Thin-film transistor (TFT)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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