Abstract
By generalizing the classical linear response theory of "stick"percolation to nonlinear regime, we find that the drain-current of a nanobundle thin-film transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LSξ(LS/LC, ρSLS2) × f (VG, VD) where A is a technology-specific constant, ξ is a function of geometrical factors such as stick length LS, channel length LC, and stick density ρS and f is a function of drain VD and gate VG biasing conditions. This scaling formula implies that the measurement of the full current-voltage characteristics of a "single" NB-TFT is sufficient to predict the performance characteristics of any other transistor with arbitrary geometrical parameters and biasing conditions.
Original language | English (US) |
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Pages (from-to) | 157-160 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 28 |
Issue number | 2 |
DOIs | |
State | Published - Feb 2007 |
Funding
Manuscript received August 20, 2006. This work was supported by the Network of Computational Nanotechnology and the Lilly Foundation. The review of this letter was arranged by Editor E. Samgiorgi.
Keywords
- Carbon nanotube (NT)
- Inhomogeneous percolation theory
- Network transistor
- Thin-film transistor (TFT)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering