CW operation of GaInAsP buried ridge structure laser at 1·5 µm grown by LP-MOCVD

R. Blondeau, M. Razeghi, M. Krakowski, G. Vilain, B. de Cremoux, J. P. Duchemin

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

A GaInAsP buried ridge structure laser (BRSL) emitting at 1.5 µm and fabricated on material grown entirely by LPMOCVD is described for the first time in the letter. Threshold currents of 40 mA DC and an output power up to 15 mW have been obtained at room temperature. CW operation up to 60°C has been achieved.

Original languageEnglish (US)
Pages (from-to)850-851
Number of pages2
JournalElectronics Letters
Volume20
Issue number21
DOIs
StatePublished - Oct 11 1984

Keywords

  • Lasers and laser applications

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'CW operation of GaInAsP buried ridge structure laser at 1·5 µm grown by LP-MOCVD'. Together they form a unique fingerprint.

Cite this