CW operation of GaInAsP buried ridge structure laser at 1·5 µm grown by LP-MOCVD

R. Blondeau; M. Razeghi; M. Krakowski; G. Vilain; B. de Cremoux; J. P. Duchemin

doi:10.1049/el:19840577

CW operation of GaInAsP buried ridge structure laser at 1·5 µm grown by LP-MOCVD

R. Blondeau, M. Razeghi, M. Krakowski, G. Vilain, B. de Cremoux, J. P. Duchemin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A GaInAsP buried ridge structure laser (BRSL) emitting at 1.5 µm and fabricated on material grown entirely by LPMOCVD is described for the first time in the letter. Threshold currents of 40 mA DC and an output power up to 15 mW have been obtained at room temperature. CW operation up to 60°C has been achieved.

Original language	English (US)
Pages (from-to)	850-851
Number of pages	2
Journal	Electronics Letters
Volume	20
Issue number	21
DOIs	https://doi.org/10.1049/el:19840577
State	Published - Oct 11 1984

Keywords

Lasers and laser applications

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19840577

Cite this

@article{209d8d7f16fd463fa521c961a7d9466d,

title = "CW operation of GaInAsP buried ridge structure laser at 1·5 µm grown by LP-MOCVD",

abstract = "A GaInAsP buried ridge structure laser (BRSL) emitting at 1.5 µm and fabricated on material grown entirely by LPMOCVD is described for the first time in the letter. Threshold currents of 40 mA DC and an output power up to 15 mW have been obtained at room temperature. CW operation up to 60°C has been achieved.",

keywords = "Lasers and laser applications",

author = "R. Blondeau and M. Razeghi and M. Krakowski and G. Vilain and {de Cremoux}, B. and Duchemin, {J. P.}",

year = "1984",

month = oct,

day = "11",

doi = "10.1049/el:19840577",

language = "English (US)",

volume = "20",

pages = "850--851",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "21",

}

TY - JOUR

T1 - CW operation of GaInAsP buried ridge structure laser at 1·5 µm grown by LP-MOCVD

AU - Blondeau, R.

AU - Razeghi, M.

AU - Krakowski, M.

AU - Vilain, G.

AU - de Cremoux, B.

AU - Duchemin, J. P.

PY - 1984/10/11

Y1 - 1984/10/11

N2 - A GaInAsP buried ridge structure laser (BRSL) emitting at 1.5 µm and fabricated on material grown entirely by LPMOCVD is described for the first time in the letter. Threshold currents of 40 mA DC and an output power up to 15 mW have been obtained at room temperature. CW operation up to 60°C has been achieved.

AB - A GaInAsP buried ridge structure laser (BRSL) emitting at 1.5 µm and fabricated on material grown entirely by LPMOCVD is described for the first time in the letter. Threshold currents of 40 mA DC and an output power up to 15 mW have been obtained at room temperature. CW operation up to 60°C has been achieved.

KW - Lasers and laser applications

UR - http://www.scopus.com/inward/record.url?scp=0021515886&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0021515886&partnerID=8YFLogxK

U2 - 10.1049/el:19840577

DO - 10.1049/el:19840577

M3 - Article

AN - SCOPUS:0021515886

SN - 0013-5194

VL - 20

SP - 850

EP - 851

JO - Electronics Letters

JF - Electronics Letters

IS - 21

ER -

CW operation of GaInAsP buried ridge structure laser at 1·5 µm grown by LP-MOCVD

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this