Cyclotron resonance in InMnAs and InMnSb ferromagnetic films

Y. H. Matsuda*, G. A. Khodaparast, R. Shen, S. Takeyama, X. Liu, J. Furdyna, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


We report cyclotron resonance measurements on ferromagnetic InMnAs and InMnSb films at high magnetic fields in the megagauss range (B > 100 T). The cyclotron resonance transitions between the Landau levels with small indices (N = 0, 1, 2,..) are clearly observed. The effective masses deduced from the resonance fields at 117 meV are 0.037m0 and 0.051m0 in InMnAs and InMnSb, respectively. They are considerably smaller than the classical band edge effective masses of heavy holes in the host semiconductors (0.35m0 in InAs and 0.32m0 in InSb) due to the quantum effect in high-magnetic fields. The Landau levels calculated by the 8-band model, semi-quantitatively can explain the cyclotron resonance positions, indicating the itinerant holes in InMnAs and InMnSb are p-like holes in the valence band of the host semiconductors.

Original languageEnglish (US)
Article number012056
JournalJournal of Physics: Conference Series
Issue number1
StatePublished - 2011
Event19th International Conference on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology, HMF-19 - Fukuoka, Japan
Duration: Aug 1 2010Aug 6 2010

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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