Cyclotron resonance in InMnAs and InMnSb ferromagnetic films

Y. H. Matsuda; G. A. Khodaparast; R. Shen; S. Takeyama; X. Liu; J. Furdyna; B. W. Wessels

doi:10.1088/1742-6596/334/1/012056

Cyclotron resonance in InMnAs and InMnSb ferromagnetic films

Y. H. Matsuda^*, G. A. Khodaparast, R. Shen, S. Takeyama, X. Liu, J. Furdyna, B. W. Wessels

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We report cyclotron resonance measurements on ferromagnetic InMnAs and InMnSb films at high magnetic fields in the megagauss range (B > 100 T). The cyclotron resonance transitions between the Landau levels with small indices (N = 0, 1, 2,..) are clearly observed. The effective masses deduced from the resonance fields at 117 meV are 0.037m₀ and 0.051m₀ in InMnAs and InMnSb, respectively. They are considerably smaller than the classical band edge effective masses of heavy holes in the host semiconductors (0.35m₀ in InAs and 0.32m₀ in InSb) due to the quantum effect in high-magnetic fields. The Landau levels calculated by the 8-band model, semi-quantitatively can explain the cyclotron resonance positions, indicating the itinerant holes in InMnAs and InMnSb are p-like holes in the valence band of the host semiconductors.

Original language	English (US)
Article number	012056
Journal	Journal of Physics: Conference Series
Volume	334
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/334/1/012056
State	Published - 2011
Event	19th International Conference on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology, HMF-19 - Fukuoka, Japan Duration: Aug 1 2010 → Aug 6 2010

Funding

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1088/1742-6596/334/1/012056

Cite this

@article{56cd16767d1b427f991f34521bc4b9b6,

title = "Cyclotron resonance in InMnAs and InMnSb ferromagnetic films",

abstract = "We report cyclotron resonance measurements on ferromagnetic InMnAs and InMnSb films at high magnetic fields in the megagauss range (B > 100 T). The cyclotron resonance transitions between the Landau levels with small indices (N = 0, 1, 2,..) are clearly observed. The effective masses deduced from the resonance fields at 117 meV are 0.037m0 and 0.051m0 in InMnAs and InMnSb, respectively. They are considerably smaller than the classical band edge effective masses of heavy holes in the host semiconductors (0.35m0 in InAs and 0.32m0 in InSb) due to the quantum effect in high-magnetic fields. The Landau levels calculated by the 8-band model, semi-quantitatively can explain the cyclotron resonance positions, indicating the itinerant holes in InMnAs and InMnSb are p-like holes in the valence band of the host semiconductors.",

author = "Matsuda, {Y. H.} and Khodaparast, {G. A.} and R. Shen and S. Takeyama and X. Liu and J. Furdyna and Wessels, {B. W.}",

year = "2011",

doi = "10.1088/1742-6596/334/1/012056",

language = "English (US)",

volume = "334",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "1",

note = "19th International Conference on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology, HMF-19 ; Conference date: 01-08-2010 Through 06-08-2010",

}

TY - JOUR

T1 - Cyclotron resonance in InMnAs and InMnSb ferromagnetic films

AU - Matsuda, Y. H.

AU - Khodaparast, G. A.

AU - Shen, R.

AU - Takeyama, S.

AU - Liu, X.

AU - Furdyna, J.

AU - Wessels, B. W.

PY - 2011

Y1 - 2011

N2 - We report cyclotron resonance measurements on ferromagnetic InMnAs and InMnSb films at high magnetic fields in the megagauss range (B > 100 T). The cyclotron resonance transitions between the Landau levels with small indices (N = 0, 1, 2,..) are clearly observed. The effective masses deduced from the resonance fields at 117 meV are 0.037m0 and 0.051m0 in InMnAs and InMnSb, respectively. They are considerably smaller than the classical band edge effective masses of heavy holes in the host semiconductors (0.35m0 in InAs and 0.32m0 in InSb) due to the quantum effect in high-magnetic fields. The Landau levels calculated by the 8-band model, semi-quantitatively can explain the cyclotron resonance positions, indicating the itinerant holes in InMnAs and InMnSb are p-like holes in the valence band of the host semiconductors.

AB - We report cyclotron resonance measurements on ferromagnetic InMnAs and InMnSb films at high magnetic fields in the megagauss range (B > 100 T). The cyclotron resonance transitions between the Landau levels with small indices (N = 0, 1, 2,..) are clearly observed. The effective masses deduced from the resonance fields at 117 meV are 0.037m0 and 0.051m0 in InMnAs and InMnSb, respectively. They are considerably smaller than the classical band edge effective masses of heavy holes in the host semiconductors (0.35m0 in InAs and 0.32m0 in InSb) due to the quantum effect in high-magnetic fields. The Landau levels calculated by the 8-band model, semi-quantitatively can explain the cyclotron resonance positions, indicating the itinerant holes in InMnAs and InMnSb are p-like holes in the valence band of the host semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=84863052116&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863052116&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/334/1/012056

DO - 10.1088/1742-6596/334/1/012056

M3 - Conference article

AN - SCOPUS:84863052116

SN - 1742-6588

VL - 334

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012056

T2 - 19th International Conference on the Application of High Magnetic Fields in Semiconductor Physics and Nanotechnology, HMF-19

Y2 - 1 August 2010 through 6 August 2010

ER -

Cyclotron resonance in InMnAs and InMnSb ferromagnetic films

Abstract

Funding

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this