Cyclotron resonance investigations in GaInAs(P)/InP heterojunctions grown by low-pressure metal-organic chemical vapour deposition

P. Maurel*, M. Razeghi, Y. Guldner, J. P. Vieren

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

The authors report the study of the cyclotron resonance spectrum of a two-dimensional electron gas at the Ga0.47In0.53As/InP interface, grown by low-pressure metal-organic chemical vapour deposition. Quantum oscillations that are clear consequences of the two dimensionality of the system have been evidenced in the region of cyclotron resonance. By tilting the sample, a second absorption peak added to the normal cyclotron resonance has been observed; it has been connected with the fact that two electric sub-bands were occupied at the heterojunction.

Original languageEnglish (US)
Article number013
Pages (from-to)695-699
Number of pages5
JournalSemiconductor Science and Technology
Volume2
Issue number10
DOIs
StatePublished - Dec 1 1987

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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