Abstract
The authors report the study of the cyclotron resonance spectrum of a two-dimensional electron gas at the Ga0.47In0.53As/InP interface, grown by low-pressure metal-organic chemical vapour deposition. Quantum oscillations that are clear consequences of the two dimensionality of the system have been evidenced in the region of cyclotron resonance. By tilting the sample, a second absorption peak added to the normal cyclotron resonance has been observed; it has been connected with the fact that two electric sub-bands were occupied at the heterojunction.
Original language | English (US) |
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Article number | 013 |
Pages (from-to) | 695-699 |
Number of pages | 5 |
Journal | Semiconductor Science and Technology |
Volume | 2 |
Issue number | 10 |
DOIs | |
State | Published - Dec 1 1987 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry